IRFS52N15DPBF - 150V 51A N-Channel HEXFET MOSFET | Infineon
MPN: IRFS52N15DPBF ✓ Hoạt độngIRFS52N15DPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between source and drain. Within the broader taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> power transistor -> silicon switch. HEXFET is Infineon's (formerly International Rectifier's) planar cell technology brand, characterized by a hexagonal cell geometry that maximizes channel width per unit area, delivering low RDS(on) and high current capability in a compact die.
Key electrical characteristics include 150V VDS, 51A ID (TC), 32 mOhm maximum RDS(on) at VGS=10V, 60 nC typical Qg, and 3.8W power dissipation on the PCB (TA) up to 230W with proper thermal management (TC). The device is qualified to JEDEC standards and is silicon-optimized for applications switching below 100 kHz, giving it excellent efficiency in mid-frequency buck/boost topologies. The D2PAK footprint offers a low RthJC, making it well-suited to surface-mount designs requiring high power density.
Typical applications include primary-side switches in high-frequency DC-DC converters, plasma display panel sustain drivers, motor drive H-bridges (low-voltage side), synchronous rectifier stages, and uninterruptible power supply (UPS) inverter bridges. The wide SOA makes it tolerant of harsh avalanche and short-circuit conditions encountered during inductor saturation.
When designing with this device, attention must be paid to gate drive strength - 60 nC total gate charge implies a peak gate current requirement of several amps during fast transitions. A dedicated gate driver IC is recommended over a microcontroller GPIO for switching frequencies above 50 kHz. The D2PAK exposed tab should be soldered to a copper pour area of at least 1 square inch to keep junction temperature within safe limits at full load.
This page synthesizes distributor inventory, parametric drop-in alternatives, application circuit recommendations, and practical PCB layout guidance not found in the manufacturer datasheet alone - giving the design engineer a single source for sourcing, selection, and implementation.
Bộ thay thế dễ dàng lắp đặt cho IRFS52N15DPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFS52N15DPBF (cùng hình factor và footprint) — khác nhau ở Technology, Mounting Type, FET Type, Gate Threshold Voltage (VGS(th)), Lead-Free Finish.
IRFS52N15DTRLPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFS52N15DTRRP
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFB52N15DPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB120N15S3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFS52N15DPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | HEXFET (Planar Cell) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) @ TC=25C | 51 A |
| RDS(on) max @ VGS=10V | 32 mOhm |
| Total Gate Charge (Qg) | 60 nC (typical) |
| Power Dissipation (PD) @ TA=25C | 3.8 W |
| Power Dissipation (PD) @ TC=25C | 230 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | D2PAK (TO-263) Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Qualification Standard | JEDEC |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes |
| Trạng thái RoHS | Compliant |
Cấu hình chân IRFS52N15DPBF
| Chân 1 | Gate — MOSFET gate control input; driven by 10V VGS for full enhancement |
| Chân 2 | Drain — MOSFET drain; internally connected to exposed tab on back of package |
| Chân 3 | Source — MOSFET source; reference for gate drive and main current return |
| Chân Tab | Drain (Tab) — Exposed metal tab on back; internally connected to Pin 2 Drain; solder to PCB copper pour for thermal dissipation |
Khu vực hoạt động an toàn (DC, TC=25C)
Ứng dụng tiêu biểu
IRFS52N15DPBF phù hợp cho 6 Áp dụngs: High-Frequency DC-DC Converter Primary Switch, Plasma Display Panel Sustain Driver, Motor Drive H-Bridge (Low-Voltage Side), Synchronous Rectifier Stage, Uninterruptible Power Supply (UPS) Inverter, Solar Inverter Boost Stage.
High-Frequency DC-DC Converter Primary Switch
The IRFS52N15DPBF's 150V VDS rating and 32 mOhm RDS(on) suit it for primary-side switching in telecom and industrial DC-DC converters running at 48V nominal bus with 72V transients. Its 60 nC total gate charge keeps switching losses low at frequencies up to 100 kHz - the silicon is specifically optimized for this band. Place it on the high-side of a buck or push-pull topology with a dedicated gate driver to keep dv/dt under control.
Được đề xuất
Plasma Display Panel Sustain Driver
Plasma display panels require high-current, fast-switching transistors for the sustain and reset phases. The IRFS52N15DPBF is rated at 51A continuous and was specifically designed for this application, with planar HEXFET technology offering wide SOA for the harsh avalanche conditions encountered during panel capacitor commutation. Use it in the sustain driver H-bridge per the Infineon PDP reference design.
Được đề xuất
Motor Drive H-Bridge (Low-Voltage Side)
In 48V to 96V brushless DC motor drives, the IRFS52N15DPBF serves as the low-side switch in a three-phase inverter. The 32 mOhm RDS(on) keeps conduction losses manageable at 30A continuous phase current, and the 150V rating provides 50% headroom above the maximum bus voltage. Use a dedicated gate driver to handle the 60 nC Qg and ensure fast turn-off to minimize shoot-through.
Được đề xuất
Synchronous Rectifier Stage
In isolated DC-DC converters such as forward or half-bridge topologies with a 48V primary, the IRFS52N15DPBF can replace Schottky diodes on the secondary side. Its 32 mOhm RDS(on) is lower than equivalent Schottky forward voltage drop at high current, improving efficiency by 2-4% at full load. Synchronous rectification requires careful timing to avoid cross-conduction; pair with a synchronous rectifier controller IC.
Được đề xuất
Uninterruptible Power Supply (UPS) Inverter
The IRFS52N15DPBF's 150V rating and 230W power dissipation capability make it suitable for low-voltage UPS inverter bridges. Four devices in a full H-bridge configuration can deliver 5 kW at 120Vrms output from a 96V battery bus. The wide SOA tolerance handles the inductive kickback from transformer leakage inductance. Use a robust gate driver and adequate snubbing to ensure long-term reliability.
Được đề xuất
Solar Inverter Boost Stage
In residential solar micro-inverters and string inverters with a 60V panel input, the IRFS52N15DPBF can serve as the boost switch stepping up to a 96V DC bus. The planar HEXFET technology provides low conduction loss and the 150V rating comfortably handles the boost voltage plus transients. Pair with a current-mode PWM controller for cycle-by-cycle current limiting during partial-shading events.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFS52N15DPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFS52N15DTRLPBF | IRFS52N15DTRRP | IRFB52N15DPBF | IPB120N15S3 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | TO-220AB - differs (through-hole) | D2PAK (TO-263) - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID @ TC=25C) | 51 A | 51 A | 51 A | 51 A | 120 A |
| RDS(on) max @ VGS=10V | 32 mOhm | 32 mOhm | 32 mOhm | 32 mOhm | <8 mOhm |
| Total Gate Charge (Qg) | 60 nC | 60 nC | 60 nC | 60 nC | Lower (OptiMOS 3 generation) |
| Power Dissipation (TC=25C) | 230 W | 230 W | 230 W | 230 W | 300 W (larger die) |
| Technology | HEXFET (Planar) | HEXFET (Planar) | HEXFET (Planar) | HEXFET (Planar) | OptiMOS 3 (Trench) |
Bảo phân biệt quan trọng
- Planar HEXFET technology with wide SOA (vsIRFB52N15DPBF)
- Optimized for sub-100kHz switching (vsIPB120N15S3)
- Industry-standard D2PAK footprint (vsIRFSL52N15DPBF)
Ghi chú thiết kế
Estimated: at 20A continuous load, conduction loss is I^2 x RDS(on) = 20^2 x 0.032 = 12.8W. The D2PAK package has theta_JA around 40 C/W on a 1-square-inch 2oz copper pour on a 4-layer FR-4 board, giving a junction temperature rise of about 51C above ambient. To keep Tj below 150C at 25C ambient, derate current to ~15A on PCB-only designs; use an external heatsink attached to the tab for higher currents.
The D2PAK exposed tab is internally connected to the Drain (Pin 2) and must be soldered directly to the PCB copper pour to provide both electrical connection and thermal dissipation. Use multiple thermal vias under the tab to conduct heat to inner copper planes. The recommended footprint is detailed in Infineon application note AN-994. Maintain at least 5mm clearance between the drain tab and any low-voltage traces to meet creepage distance for 150V-rated designs.
Keep the gate drive loop (gate-driver output -> gate -> source -> gate-driver ground return) physically small - under 1 square cm of loop area - to minimize parasitic inductance that can cause ringing and false triggering. Place a 10 Ohm gate resistor close to the gate pin to dampen oscillation. The power loop (drain -> load -> source) should also be minimized to reduce EMI and voltage overshoot at turn-off.
Do not exceed the SOA curve - the device can sustain 51A only at very low VDS (around 1V). At VDS=100V, the DC current must be limited to under 5A. For inductive switching, add a snubber or clamp circuit to limit voltage overshoot. Verify VGS never exceeds the absolute maximum rating (typically +/-20V) by using a gate-source Zener clamp of 18V or lower.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product declaration. Qualified to JEDEC standards for industrial market per datasheet. Not AEC-Q100 qualified for automotive applications.
