IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon
MPN: IRFZ48NSTRLPBF ✓ Hoạt độngIRFZ48NSTRLPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. The IRFZ48N belongs to Infineon's HEXFET power MOSFET family, which in turn is part of the broader discrete power semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> power management component. Its low Rds(on) and high current rating make it a fundamental building block for DC-DC conversion, motor drive, and load switching where efficient low-side or high-side switching is required.
Key electrical characteristics include a maximum drain-to-source voltage of 55 V, continuous drain current of 64 A at 25°C case temperature, pulsed drain current of approximately 220 A, and a static drain-to-source on-resistance of 14 mΩ at VGS = 10 V. The device is fully enhanced at VGS(th) of 2.0 V to 4.0 V, supports standard 10 V gate drive, and integrates an intrinsic body diode for inductive switching. Power dissipation is rated 3.8 W on the FR-4 board (Ta) and 130 W at the case (Tc).
The internal architecture uses a planar stripe DMOS cell with a vertical drain structure that maximizes silicon area utilization and minimizes on-state losses. The 14 mΩ Rds(on) and 54 nC Qg trade-off is balanced for mid-frequency PWM applications (typically below 200 kHz), giving a Figure-of-Merit that suits continuous-conduction synchronous rectification, class-D audio output stages, and battery-protection switching.
Typical applications include brushed DC motor drive, high-current synchronous rectification in secondary-side SMPS, solenoid and relay drivers, LED driving arrays, reverse-polarity battery protection, and automotive body-electronics switching. The D2PAK footprint is a drop-in compatible upgrade path for designs originally built around the TO-220 through-hole IRFZ48N.
When laying out the PCB, use a substantial copper pour on the drain tab (the metal tab is the drain) for both thermal dissipation and short-loop current return. Keep the gate loop area as small as possible, use a 10 Ω to 100 Ω gate resistor to suppress ringing, and ensure the source-sense return is shared with the gate driver ground to prevent dv/dt-induced turn-on.
This page synthesizes distributor stock data, drop-in alternatives, and PCB-layout guidance not found in the standalone datasheet.
Bộ thay thế dễ dàng lắp đặt cho IRFZ48NSTRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFZ48NSTRLPBF (cùng hình factor và footprint) — khác nhau ở Technology, Package, Total Gate Charge (Qg), FET Type, Operating Temperature Range.
IRFZ48NSTRRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLZ44NSTRLPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR2405TRLPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR3636TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR3636TRLPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR3410TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFZ24NPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFZ48NSTRLPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 54 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | D2PAK (TO-263) Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Packaging | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | Lead-free (PBF) matte tin |
| Trạng thái RoHS | Compliant |
| Technology Family | HEXFET advanced process technology |
Cấu hình chân IRFZ48NSTRLPBF
| Chân 1 | Gate — Gate terminal - control input, VGS drive |
| Chân 2 | Drain — Drain terminal (also connected to metal tab) |
| Chân 3 | Source — Source terminal - power return |
| Chân 4 | Tab — Drain (electrically connected to pin 2) - heatsink tab |
Ứng dụng tiêu biểu
IRFZ48NSTRLPBF phù hợp cho 6 Áp dụngs: Brushed DC Motor Drive (12V/24V), Synchronous Rectification in SMPS, Reverse-Polarity Battery Protection, Class-D Audio Output Stage, Solenoid and Relay Driver, Automotive Body Electronics Switching.
Brushed DC Motor Drive (12V/24V)
The IRFZ48NSTRLPBF is well suited for brushed DC motor drive in 12 V and 24 V systems, where its 64 A continuous drain current (Tc=25°C) handles motor stall in-rush and its 14 mΩ Rds(on) at VGS=10 V minimizes conduction loss during PWM control. Placed as a low-side switch between motor terminal and ground, it is driven by a gate driver IC such as the IRS2109STRPBF at 1-20 kHz PWM with a 10 Ω gate resistor; the low 54 nC Qg ensures fast switching without excessive gate-driver losses. Compared to a TO-220 IRFZ48N, the D2PAK surface-mount version enables direct PCB-mount cooling through the drain tab into the copper pour, reducing thermal resistance on a 2 oz copper layout to roughly 35°C/W.
Được đề xuất
Synchronous Rectification in SMPS
In secondary-side synchronous rectification of 12 V output SMPS and 24 V telecom bus converters, the IRFZ48NSTRLPBF replaces a Schottky rectifier to improve efficiency by 2-4%. With Rds(on) of 14 mΩ and 54 nC Qg, it suits CCM operation up to roughly 100 kHz before switching losses dominate. Driven by a synchronous-rectifier controller such as the IR1161 or by a fixed-deadtime gate signal from the primary-side controller, the MOSFET must have a body diode capable of handling the dead-time commutation - the IRFZ48N's intrinsic body diode is rated for the full 64 A continuous. Use a Schottky co-pack or RC snubber across drain-source to limit reverse-recovery spikes.
Được đề xuất
Reverse-Polarity Battery Protection
Used as a high-side P-channel substitute or as a low-side N-channel disconnect switch in 12 V / 24 V battery protection circuits, the IRFZ48NSTRLPBF provides a low-resistance disconnect path (14 mΩ) and handles in-rush from capacitor banks. In a low-side N-channel configuration, a charge pump such as the LT3482 or BCR431UXTSA1 generates the 10 V gate drive above battery positive to fully enhance the MOSFET; in high-side P-channel designs, the IRFZ48N is replaced by a P-channel part. The MOSFET's 175°C maximum junction temperature supports automotive under-hood environments, and its 55 V VDS rating tolerates load-dump transients up to 35 V (per ISO 7637-2 with TVS clamp).
Được đề xuất
Class-D Audio Output Stage
In 100 W to 300 W class-D audio amplifiers, the IRFZ48NSTRLPBF serves as the output-side half-bridge switch, where its 14 mΩ Rds(on) and 64 A peak current drive a 4 Ω or 8 Ω loudspeaker load. Driven by a gate driver such as the IRS2092 or IRS2153DSTRPBF at 250-400 kHz PWM, the MOSFET's low Qg of 54 nC keeps switching losses to under 5 W per channel at full output. Compared to older IRF540N parts, the IRFZ48N delivers nearly 70% lower conduction loss - directly translating to higher amplifier efficiency and smaller heatsinks. Designers should add a small RC snubber across drain-source to suppress ringing in the LC output filter.
Được đề xuất
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFZ48NSTRLPBF's 64 A peak current capability and 14 mΩ Rds(on) to handle inductive kickback when de-energizing 24 V to 48 V coils. Placed as a low-side switch with a flyback diode across the solenoid, the MOSFET switches cleanly without arcing on the relay contacts; the 130 W power dissipation rating (Tc) gives ample thermal margin for continuous duty. The 175°C junction temperature rating supports industrial control cabinets at elevated ambient temperatures up to 85°C. Add a 10 Ω to 47 Ω gate resistor and a TVS diode across drain-source for robust EMI performance in factory environments.
Được đề xuất
Automotive Body Electronics Switching
The IRFZ48NSTRLPBF supports 12 V automotive body-electronics loads such as headlamp relays, seat heaters, and blower motors where 55 V VDS rating handles load-dump transients and the 64 A rating covers cold-start in-rush. Although the part itself is not AEC-Q100 qualified, its Infineon HEXFET process technology is automotive-proven in similar SKUs; for strict AEC-Q100 requirements, use the IRFZ48NSTRLPBF in non-safety sub-systems. The D2PAK package is well suited for engine-control-unit (ECU) auxiliary outputs, where the metal-tab drain can be screwed to a heatsink for high-current loads above 30 A continuous.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFZ48NSTRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFZ48NSTRRPBF | IRLZ44NSTRLPBF | IRFR2405TRLPBF | IRLR3636TRPBF | IRLR3410TRPBF | IRFZ24NPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | TO-220AB - through-hole |
| VDS (max) | 55 V | 55 V | 55 V | 55 V | 60 V | 55 V | 55 V |
| Continuous Drain Current (Tc=25C) | 64 A | 64 A | 47 A | 56 A | 50 A | 40 A | 48 A |
| Lifecycle Status | Active | Obsolete (migrate to TRL) | Active | Active | Active | Active | Active |
| RoHS / Lead-free | Yes / Yes (PBF) | Yes / Yes (PBF) | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Bảo phân biệt quan trọng
- Lowest Rds(on) at 55V VDS in D2PAK among Infineon HEXFET family (vsIRLZ44NSTRLPBF)
- Active production with broad distributor stock (vsIRFZ48NSTRRPBF)
- Higher continuous current vs DPAK alternatives (vsIRLR3636TRPBF (DPAK))
Ghi chú thiết kế
The D2PAK package dissipates up to 130 W at Tc=25°C, but on a standard FR-4 board the realistic power dissipation is limited to 3.8 W (Ta) due to RθJA. To exceed this, design the PCB copper pour on the drain tab as a top-side thermal land at least 1 square inch of 2 oz copper, with thermal vias to inner copper planes. Estimated: with 2 oz copper on a 1 sq inch top land, RθJA drops to ~35°C/W, allowing up to 4 W continuous at 25°C ambient with proper airflow. For continuous 100 W loads, attach an external heatsink with thermal compound.
Minimize the gate-drive loop area by placing the gate resistor and gate-driver IC as close to the gate pin as possible. Use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing; lower values give faster switching but higher EMI. The source-sense return must share the same ground path as the gate-driver ground - any inductance in the source path will cause voltage feedback that can falsely turn on the MOSFET during fast dv/dt transitions (Miller turn-on). Add a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 20% of VDS.
Do not exceed VGS = ±20 V - use a Zener clamp (15 V) gate-to-source if the gate driver output can overshoot during switching transients. Avoid using the IRFZ48NSTRLPBF at VDS continuously above 48 V; the 55 V rating allows transient headroom but not sustained 55 V operation. The internal body diode is rated for average forward current, not repetitive peak - for high-frequency switching, ensure the body diode recovery time fits within the dead-time of the half-bridge; otherwise add an external Schottky co-pack.
Thông tin tuân thủ
RoHS compliant per Infineon product page (lead-free matte-tin finish, PBF suffix). Not AEC-Q100 qualified - for automotive safety applications choose an AEC-Q100 part such as BTS6133DAUMA1. The Infineon part is part of the HEXFET advanced-process family.
