ISC009N03LF2SATMA1 - 30V 341A 0.9mΩ N-Channel MOSFET | Infineon
MPN: ISC009N03LF2SATMA1 ✓ Hoạt độngISC009N03LF2SATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical energy in switching power supplies, motor drives, and battery management. Within the discrete-semiconductor hierarchy, MOSFETs sit beneath transistors and above specialized sub-types such as logic-level FETs; the N-channel enhancement-mode variant is the most common building block for low-side and high-side switching in DC-DC converters. The ISC009N03LF2SATMA1 belongs to the Infineon 30 V OptiMOS family, optimized for low RDS(on) at small package sizes.
Key specifications include a 30 V drain-source breakdown voltage, 341 A continuous drain current at TC, 0.9 mΩ maximum RDS(on) at VGS = 10 V, and a gate threshold voltage around 2.35 V. The 188 W power dissipation rating at TC allows operation in high-current paths without immediate thermal derating concerns, while the SuperSO8 5x6 footprint (PG-TDSON-8-62) provides an exposed pad that drops junction-to-case thermal resistance dramatically compared to smaller MOSFET packages.
Architecturally, the part uses a trench-gate cell design that maximizes channel density per square millimeter, which directly translates to the sub-milliohm RDS(on). This is achieved by shrinking the unit cell pitch while preserving a robust breakdown margin suitable for 30 V systems and short transient over-voltages on 24 V buses.
Typical applications include high-current DC-DC converters, e-mobility and e-bike motor control, battery management system (BMS) protection, hot-swap and OR-ing circuits, and 24 V industrial load switching. Designers typically place it as the low-side synchronous FET in point-of-load converters or as the main switch in hot-swap controllers.
When designing with this part, ensure the gate driver can supply and sink sufficient peak current to charge the gate charge quickly; a 10 V gate drive is required to achieve the rated 0.9 mΩ. PCB layout must provide a low-impedance source connection and adequate copper area on the exposed pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho ISC009N03LF2SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISC009N03LF2SATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Gate Threshold Voltage (VGS(th)), Continuous Drain Current (ID) at TA=25C, Continuous Drain Current (ID) at Ta.
ISC028N03LF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ028N03LF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ033N03LF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ056N03LF2SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04LSGATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISC009N03LF2SATMA1 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | N-Channel MOSFET |
| Technology | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A |
| Continuous Drain Current (ID) at Tc | 341 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 188 W |
| On-Resistance RDS(on) max | 0.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) |
| Hộp | PG-TDSON-8-62 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISC009N03LF2SATMA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | D — Drain |
| Chân 5 | D — Drain (also exposed pad) |
| Chân 6 | D — Drain (also exposed pad) |
| Chân 7 | S — Source |
| Chân 8 | S — Source |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
ISC009N03LF2SATMA1 phù hợp cho 6 Áp dụngs: High-Current DC-DC Converter, E-Bike and E-Mobility Motor Drive, Battery Management System (BMS) Protection, Hot-Swap and OR-ing Circuit, Industrial 24V Load Switching, USB-PD and Fast-Charging Power Path.
High-Current DC-DC Converter
The ISC009N03LF2SATMA1 fits 12 V to 24 V buck and buck-boost converters delivering 100 A to 300 A continuous output. Its 0.9 mΩ RDS(on) at 10 V VGS keeps synchronous-FET conduction loss below 3 W at 50 A, while the 341 A TC current rating provides ample headroom for transient loads. The SuperSO8 5x6 footprint (PG-TDSON-8-62) integrates cleanly into compact POL converter layouts. Compared to smaller SO-8 FETs it reduces the need for paralleling, which simplifies gate-drive timing and current sharing.
Được đề xuất
E-Bike and E-Mobility Motor Drive
In 24 V to 48 V e-bike and light electric-vehicle motor drives, the ISC009N03LF2SATMA1 serves as a low-side or half-bridge switch with 30 V VDS margin and 341 A peak current capability. Its sub-milliohm RDS(on) minimizes I²R losses during high-torque acceleration phases, improving battery runtime by an estimated 2-4% versus higher-resistance alternatives. The 5x6 mm SuperSO8 footprint enables compact motor-controller PCB layouts where space is constrained by housing geometry and connector placement.
Được đề xuất
Battery Management System (BMS) Protection
The ISC009N03LF2SATMA1 is well-suited as a high-current disconnect FET in 12 V to 24 V battery management systems. Its 341 A continuous rating covers the full short-circuit let-through of large Li-ion packs, while the 0.9 mΩ on-resistance keeps voltage drop below 50 mV at 50 A, preserving pack capacity measurement accuracy. The 30 V VDS handles the upper limit of a fully charged 24 V lead-acid or 7S Li-ion string with margin for transient reverse EMF during contactor opening.
Được đề xuất
Hot-Swap and OR-ing Circuit
In 24 V hot-swap and redundant OR-ing applications, the ISC009N03LF2SATMA1's 0.9 mΩ RDS(on) limits steady-state voltage drop to under 100 mV at 100 A, well within the load's input-tolerance window. The 341 A continuous rating handles inrush transients when paired with a controller that ramps gate voltage. The exposed-pad SuperSO8 5x6 package provides low thermal resistance when soldered to a 2+ square-inch copper pour, supporting continuous high-current operation in server backplanes and telecom equipment.
Được đề xuất
Industrial 24V Load Switching
The ISC009N03LF2SATMA1 acts as a high-side or low-side switch in 24 V industrial automation modules driving solenoid valves, motor starters, and relay coils. Its 30 V VDS handles the inductive flyback of 24 V coils with adequate snubber margin, while the 341 A rating tolerates inrush from capacitive loads and motor starting currents. The SuperSO8 5x6 footprint integrates into IP67-sealed industrial housings where PCB area is at a premium.
Được đề xuất
USB-PD and Fast-Charging Power Path
In USB-PD 3.1 high-power charging and 100 W to 240 W adapter designs, the ISC009N03LF2SATMA1 serves as a synchronous rectification FET on the secondary side of a flyback or as the high-current path FET in a buck-boost topology. Its 0.9 mΩ RDS(on) at 10 V VGS keeps synchronous-FET losses below 1% of total output power, directly impacting adapter efficiency and thermal compliance with Energy Star and CoC Tier-2 limits.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISC009N03LF2SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISC028N03LF2SATMA1 | ISZ028N03LF2SATMA1 | ISZ033N03LF2SATMA1 | ISC015N06NM5ATMA1 | BSC019N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same | PG-TDSON-8-62 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 60 V | 40 V |
| Gate Threshold Voltage | 2.35 V (typ) | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range | Similar OptiMOS range |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- Sub-milliohm RDS(on) in 5x6 mm footprint (vsISC028N03LF2SATMA1)
- Highest continuous current rating in 30V OptiMOS family (vsISZ028N03LF2SATMA1)
- Industry-standard SuperSO8 5x6 footprint (vsBSC019N04LSGATMA1)
Ghi chú thiết kế
Estimated: At 100 A continuous drain current with RDS(on) of 0.9 mΩ, conduction loss is approximately 9 W (I²R). With a typical SuperSO8 5x6 theta_JC of ~0.5 °C/W and theta_JA of ~50 °C/W on a 1 sq-inch 2-oz copper pour, junction temperature rises about 15 °C above case at full load. Designers must ensure the PCB thermal path can sustain 188 W TC rating for transient peaks - increase copper area or add thermal vias to inner planes for continuous high-current operation.
Place the exposed pad on a continuous copper pour of at least 1 square inch (2-oz copper recommended) with thermal vias to internal ground planes for optimal heat dissipation. Source pins (2, 3, 7, 8) must be tied together on the top layer with wide traces - at 100 A even 10 mΩ of trace resistance adds 1 W of loss. Keep the gate-drive loop compact to minimize parasitic inductance that causes ringing and potential VGS overshoot above the 20 V absolute maximum.
Do not operate the ISC009N03LF2SATMA1 above the rated 30 V VDS - inductive loads like solenoids and motors generate flyback voltages that can exceed nominal supply. Add a TVS diode or RC snubber across the load. The 2.35 V gate threshold means a logic-level 3.3 V GPIO cannot fully enhance the FET; use a 10 V gate driver for rated 0.9 mΩ RDS(on). Exceeding the 175 °C maximum junction temperature degrades long-term reliability exponentially.
Keep the high-current drain-source loop area to a minimum to reduce parasitic inductance - this is critical for switching applications where di/dt can reach 1 kA/μs. Place the gate driver within 5 mm of the gate pin to limit gate-loop inductance below 5 nH. Use kelvin source connection if available; the SuperSO8 5x6 PG-TDSON-8-62 pinout allows source-pin separation from the power-path source connection for cleaner gate drive.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications consult Infineon automotive-grade OptiMOS portfolio. Lead-free reflow profile per J-STD-020.
