ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: ISZ033N03LF2SATMA1 ✓ Hoạt độngISZ033N03LF2SATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current from drain to source when the gate-source voltage exceeds the threshold. The OptiMOS 5 family is Infineon's 30 V/40 V/60 V/80 V/100 V generation of low-voltage N-channel MOSFETs, sitting within the broader taxonomy of power MOSFET -> power semiconductor -> discrete semiconductor -> electronic component. They are designed to minimize conduction loss (low RDS(on)), switching loss (low Qg, Qgd), and figure-of-merit (FOM = RDS(on) x Qg) — parameters that directly determine switching-converter efficiency.
Key features of the ISZ033N03LF2SATMA1 include an extremely low on-resistance for a 30 V N-channel device, ultra-low gate charge Qg enabling fast switching edges, low RDS(on) x Qg figure-of-merit, and an operating junction temperature up to +175 C. The PG-TSDSON-8 FL (flip-chip leadless) package has a top-side cooling thermal pad that pulls heat directly out of the silicon die, dramatically lowering thermal resistance compared to standard wire-bonded TSDSON packages.
From an architecture perspective, this part uses Infineon's latest-generation silicon process to deliver a sub-milliohm-class on-resistance at 10 V gate drive, while still maintaining safe linear-mode operation. The device is engineered for both hard-switched and soft-switched topologies including synchronous buck converters, point-of-load regulators, and motor-drive half-bridges operating at switching frequencies from 100 kHz to over 1 MHz.
Typical applications include DC-DC voltage regulators for telecom and server power supplies, OR-ing FETs in redundant 12 V / 24 V distribution, battery management and protection circuits in cordless power tools, USB-PD and Type-C load switches, and synchronous rectification in secondary-side SMPS stages. The 30 V rating gives comfortable headroom for 12 V bus rails and 19 V laptop adapters.
When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V to fully enhance the channel and achieve the lowest RDS(on). For high-frequency applications above 500 kHz, pay close attention to gate-loop inductance and use a gate-source resistor of 10-100 ohm to suppress ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
The PG-TSDSON-8 FL package features an exposed top-side pad that interfaces directly with the silicon backside, enabling direct PCB-side cooling in both top- and bottom-cooled configurations. This makes it an excellent choice for high-density designs where the footprint is constrained but thermal dissipation must remain low.
Bộ thay thế dễ dàng lắp đặt cho ISZ033N03LF2SATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với ISZ033N03LF2SATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Gate Threshold Voltage (VGS(th)), Continuous Drain Current (ID) at TA=25C.
ISZ019N03L5SATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ0901NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ0501NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0921NDIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5LF2ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQE013N04LM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISZ033N03LF2SATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A |
| Continuous Drain Current (ID) at TC=25C | 109 A |
| Power Dissipation (PD) at TA=25C | 3 W |
| Power Dissipation (PD) at TC=25C | 71 W |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | PG-TSDSON-8 FL (8-pin) |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS 5 |
| Trạng thái RoHS | Compliant |
Cấu hình chân ISZ033N03LF2SATMA1
| Chân 1 | Source — Source connection (low-side thermal path) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input (10V VGS typical for full enhancement) |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain — Drain connection (top pad bonded, thermal relief) |
Khu vực hoạt động an toàn - ISZ033N03LF2SATMA1
Ứng dụng tiêu biểu
ISZ033N03LF2SATMA1 phù hợp cho 7 Áp dụngs: Synchronous Buck Converter for 12V Bus, OR-ing FET for Redundant 12V/24V Distribution, USB-PD Load Switch and Type-C VBUS Protection, Cordless Power Tool Battery Protection, Motor Drive Half-Bridge (12V/24V DC Motors), Secondary-Side Synchronous Rectification in SMPS, Hot-Swap / Inrush Current Limiter for 12V Buses.
Synchronous Buck Converter for 12V Bus
The ISZ033N03LF2SATMA1 is ideal as the low-side synchronous rectifier in a 12 V buck converter. Its 30 V VDS provides comfortable derating headroom on a 12 V rail with switching transients, while the 109 A TC current rating handles multi-hundred-watt power levels. The OptiMOS 5 ultra-low Qg minimizes switching loss at 300-500 kHz operation, and the PG-TSDSON-8 FL top-side cooling pad pulls heat directly into a top-side heatsink or PCB copper pour. Compared to older 30 V MOSFETs, the figure-of-merit is roughly 30% lower, directly translating to higher converter efficiency.
Được đề xuất
OR-ing FET for Redundant 12V/24V Distribution
In redundant telecom or server power architectures, the ISZ033N03LF2SATMA1 serves as an OR-ing FET between two 12 V or 24 V power sources. Its 30 V VDS comfortably handles the highest common bus voltage with margin, and the 109 A continuous rating supports full 1.3 kW-plus redundant power feed. The very low RDS(on) at 10 V VGS minimizes conduction loss in the always-on OR-ing path, while the OptiMOS 5 fast body-diode reverse recovery enables clean hot-swap transitions. A gate driver such as IRS2004STRPBF or IRS2181STRPBF handles the miller plateau and turn-off speeds needed for fast disconnect during fault conditions.
Được đề xuất
USB-PD Load Switch and Type-C VBUS Protection
USB-Power-Delivery and Type-C VBUS paths require a 20 V-rated load switch that is fully on at 5 V gate drive. The ISZ033N03LF2SATMA1's 30 V VDS rating handles 20 V PD voltage steps, while the sub-3 W TA dissipation stays within USB Type-C connector thermal limits for typical 5 A current levels. The small PG-TSDSON-8 FL footprint fits behind the connector on space-constrained PCB designs, and the top-side cooling pad can dump heat to an inner copper layer. Paired with a Type-C controller, this enables safe and efficient VBUS gating and fault isolation.
Được đề xuất
Cordless Power Tool Battery Protection
Battery Management Systems (BMS) in 18 V / 20 V cordless tools need a robust N-channel MOSFET for discharge and short-circuit protection. The ISZ033N03LF2SATMA1 with 30 V VDS handles a fully-charged 20 V Li-ion pack with margin, while the 109 A TC rating supports peak motor currents well above 50 A during stall events. The OptiMOS 5 process delivers an extremely low RDS(on) that reduces conduction loss during heavy discharge, extending runtime per charge cycle. The PG-TSDSON-8 FL flip-chip package provides the ruggedness needed for high-vibration tool environments.
Được đề xuất
Motor Drive Half-Bridge (12V/24V DC Motors)
In brushed DC and small BLDC motor drive half-bridges operating from 12 V or 24 V batteries, the ISZ033N03LF2SATMA1 fills both high-side and low-side switch positions. The 30 V VDS rating covers 24 V lead-acid and 21 V Li-ion chemistries with margin for back-EMF spikes; the 109 A continuous TC rating supports motor currents in the 30-50 A range. The fast switching capability enables PWM frequencies up to 50 kHz for smooth torque control, while the low gate charge reduces driver power dissipation. Pair with IRS2104STRPBF or IR2104STRPBF half-bridge gate drivers for complete control.
Được đề xuất
Secondary-Side Synchronous Rectification in SMPS
The ISZ033N03LF2SATMA1 is an excellent synchronous rectifier on the secondary side of an isolated DC-DC converter or flyback SMPS operating on a 5 V or 12 V output rail. The 30 V VDS provides significant margin over the secondary-side rectified voltage, and the sub-milliohm-class RDS(on) reduces secondary-side conduction loss, often replacing a Schottky diode for higher efficiency. The very low Qrr body diode minimizes dead-time losses at higher switching frequencies, making it a strong choice for 500 kHz+ LLC or active-clamp designs. The PG-TSDSON-8 FL's top-side pad can dissipate the secondary-side conduction heat directly upward.
Được đề xuất
Hot-Swap / Inrush Current Limiter for 12V Buses
In telecom and server 12 V distribution, hot-swap controllers need an N-channel MOSFET that can survive inrush currents during board insertion. The ISZ033N03LF2SATMA1's 30 V VDS and 109 A TC rating handle the peak inrush surge of bulk capacitors charging, while the PG-TSDSON-8 FL package provides the thermal mass and top-side pad to dissipate sustained fault currents. The controlled RDS(on) and SOA characteristics allow the controller to slowly ramp VGS to limit di/dt, while the fast body diode provides a path for stored inductor energy during abnormal load events.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho ISZ033N03LF2SATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISZ019N03L5SATMA1 | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | BSC0921NDIATMA1 | ISC015N06NM5LF2ATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8 FL | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 60 V | 40 V |
| Technology / Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Bảo phân biệt quan trọng
- Lowest RDS(on) in the Infineon 30V OptiMOS 5 PG-TSDSON-8 FL family (vsISZ019N03L5SATMA1)
- Higher current capability than BSC-family 30V OptiMOS 5 PG-TSDSON-8 parts (vsBSZ0901NSIATMA1)
- 30V VDS optimized for 12V/24V low-voltage bus designs (vsISC015N06NM5LF2ATMA1)
Ghi chú thiết kế
Estimated: at TA=25 C with no heatsink, the PG-TSDSON-8 FL package dissipates up to 3 W (3 W TA rating); at TC=25 C with infinite heatsink it can dissipate 71 W. For most PCB designs, plan thermal layout so the top pad connects via thermal vias (12+ vias, 0.3 mm drill) to an inner copper pour of at least 1 square inch. Without thermal vias the junction-to-ambient thermal resistance can exceed 60 C/W, limiting practical continuous current to 15 A in still air.
Use a gate-source resistor of 10-100 ohm in series with the gate driver output to damp the LC tank formed by gate-source capacitance and gate-loop inductance. Keep the gate drive loop as small as possible (loop area < 0.5 cm^2) to minimize ringing and dv/dt-induced turn-on. Place a 1 M ohm gate-source resistor from gate to source to keep the device off during power-up when the gate driver is in high-impedance.
The PG-TSDSON-8 FL uses a top-side exposed pad connected to the silicon drain. For best thermal performance, route the drain copper plane on the top PCB layer directly under the device and stitch 12+ thermal vias (0.3 mm drill, 1 oz copper plating) to inner planes. Keep the source connection traces short and wide to minimize parasitic source inductance that would otherwise slow turn-on and increase switching loss.
Do not exceed the absolute maximum VGS rating (typically +/- 20 V for OptiMOS 5); use a gate-source Zener clamp if the gate driver is at risk of exceeding this limit during fault conditions. The 30 V VDS rating is absolute maximum at TJ=25 C - derate by 20% for typical application design margin. Ensure the source pin current path is sized to handle 109 A peak during TC operation; PCB copper thickness matters more than trace width at this current level.
Thông tin tuân thủ
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade MOSFET.
