IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon
MPN: IRF3007STRLPBF ✓ Hoạt độngIRF3007STRLPBF Tóm tắt
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to handle high currents and voltages with minimal conduction loss. As a member of the N-channel enhancement-mode family, the IRF3007STRLPBF turns on when a positive gate-to-source voltage exceeds its threshold, allowing current to flow from drain to source. Within the power-management hierarchy, it sits between signal-level logic MOSFETs and IGBTs (Insulated Gate Bipolar Transistors), offering the best balance of low on-resistance and moderate switching speed for sub-100 V applications.
Key specifications include a drain-to-source breakdown voltage of 75 V, continuous drain current of 62 A at 25 °C case temperature, pulsed drain current handling of 250 A, and a maximum junction temperature of 175 °C. The 12.6 mΩ typical R_DS(on) at VGS = 10 V minimizes conduction losses, while the low gate charge (typically 110 nC total) and fast switching characteristics support efficient high-frequency operation. The D2PAK package provides a low thermal resistance of 40 °C/W junction-to-case, enabling direct PCB heatsink mounting for high-power designs.
Typical applications include industrial motor drives, synchronous rectification in switch-mode power supplies, DC-DC converter high-side switches, battery management systems for 12 V/24 V/48 V rails, and automotive solenoid and relay drivers. The 175 °C maximum junction temperature and avalanche-rated ruggedness make it suitable for harsh-environment designs where repetitive avalanche events may occur.
When designing with this device, ensure the gate drive voltage reaches at least 10 V for full enhancement and minimum R_DS(on). Use a gate resistor (typically 10-100 Ω) to control switching speed and limit ringing, and provide adequate copper pours or an external heatsink to keep junction temperature below 150 °C for reliable long-term operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IRF3007STRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRF3007STRLPBF (cùng hình factor và footprint) — khác nhau ở Package, Technology, RoHS Status, Drain-Source Voltage (VDS), Operating Junction Temperature.
IRFB3207ZPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFB4110PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFB3077PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFB3307ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFB3207PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFB4310ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRF1018EPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFH5015TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF3007STRLPBF Tỷ lệ tối đa & tính chất điện
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 75 V |
| Continuous Drain Current (Id) at Tc=25°C | 62 A |
| Pulsed Drain Current (Idm) | 250 A |
| Static Drain-to-Source On-Resistance (RDS(on)) | 12.6 mΩ typical at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 110 nC typical |
| Maximum Power Dissipation (Pd) | 120 W at Tc=25°C |
| Nhiệt độ mối nối hoạt động | -55°C to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.0 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | 40 °C/W |
| Package Type | D2PAK (TO-263), 3-pin (2+Tab), Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Trạng thái RoHS | Compliant (Lead-Free, PBF suffix) |
| Avalanche Rated | Yes (Repetitive Avalanche Allowed up to Tjmax) |
Cấu hình chân IRF3007STRLPBF
| Chân 1 | Gate — Gate terminal - drive with 10V for full enhancement |
| Chân 2 | Drain — Drain terminal - internally connected to the metal tab/backside |
| Chân 3 | Source — Source terminal - reference for gate drive |
| Chân Tab | Drain — Metal tab electrically connected to pin 2 (Drain) - mount to PCB copper pour or heatsink for thermal dissipation |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRF3007STRLPBF phù hợp cho 6 Áp dụngs: Industrial Motor Drive (BLDC and DC), Synchronous Rectification in SMPS, Battery Management System (BMS) High-Side Switch, Automotive 12 V/24 V Solenoid and Relay Driver, High-Current DC Load Switch, Power Tools and Cordless Equipment.
Industrial Motor Drive (BLDC and DC)
The IRF3007STRLPBF is well suited for industrial motor drive applications requiring high-current switching in the 24 V to 48 V range. Its 62 A continuous drain current rating at 25 °C case and 12.6 mΩ RDS(on) at VGS = 10 V deliver low conduction losses for 30 A to 50 A continuous motor loads. The 175 °C maximum junction temperature supports harsh industrial environments, while the D2PAK package enables direct PCB-mount heatsinking. Pair with a gate driver such as the IR2109SPBF or IR2110SPBF for reliable high-side/low-side drive in three-phase inverter topologies used in industrial BLDC servo motors and conveyor drives.
Được đề xuất
Synchronous Rectification in SMPS
The IRF3007STRLPBF functions as a synchronous rectifier MOSFET in 48 V to 60 V switch-mode power supplies (SMPS). Its low 12.6 mΩ on-resistance at VGS = 10 V reduces conduction loss compared to Schottky diodes, particularly in high-current 20 A to 40 A output rails. The 110 nC typical total gate charge enables switching frequencies of 100 kHz to 250 kHz with acceptable drive losses. Place the MOSFET on the low-side of a buck converter with the tab connected to ground, using a synchronous rectifier controller IC to manage dead-time and prevent shoot-through.
Được đề xuất
Battery Management System (BMS) High-Side Switch
In 24 V and 48 V battery management systems, the IRF3007STRLPBF serves as a high-side disconnect switch with low conduction loss. Its 75 V V(BR)DSS provides comfortable headroom above 48 V nominal battery stacks, while the 62 A continuous current rating handles peak discharge currents for e-mobility and stationary storage. The D2PAK package allows PCB-mount heatsinking for continuous 30 A operation. Use a dedicated high-side gate driver IC such as the IR2117PBF for floating supply generation to drive the gate above the battery voltage.
Được đề xuất
Automotive 12 V/24 V Solenoid and Relay Driver
The IRF3007STRLPBF drives 12 V and 24 V automotive solenoids, relays, and high-current lamps in aftermarket and non-safety applications. Its 12.6 mΩ on-resistance and 62 A continuous current rating handle inductive kick from solenoids up to several amperes continuous. The 175 °C maximum junction temperature survives under-hood thermal stress. Note that this part is not AEC-Q101 qualified; for OEM automotive applications, select the AUIRF7640S2TR or similar AEC-Q101-qualified HEXFETs from Infineon's automotive portfolio instead.
Được đề xuất
High-Current DC Load Switch
Use the IRF3007STRLPBF as a high-current DC load switch in industrial control panels and power distribution units. Its 62 A continuous rating and 75 V V(BR)DSS make it suitable for switching 24 V and 48 V DC buses powering resistive heaters, solenoids, and motor loads. The low on-resistance of 12.6 mΩ minimizes voltage drop across the switch, while the D2PAK package with its exposed tab provides excellent thermal dissipation. Drive the gate directly from a microcontroller GPIO through a 100 Ω gate resistor for simple on/off control.
Được đề xuất
Power Tools and Cordless Equipment
The IRF3007STRLPBF is appropriate for cordless power tools and portable battery-powered equipment operating from 18 V to 36 V battery packs. Its 12.6 mΩ RDS(on) and 62 A continuous current handle peak motor currents of 30 A to 50 A common in drill and saw applications. The 175 °C junction temperature rating supports the harsh thermal cycling of intermittent high-current operation. Place the MOSFET as the low-side switch in the brushed or BLDC motor H-bridge, paired with an appropriate gate driver and current-sense amplifier for overload protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRF3007STRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFB3207ZPBF | IRFB4110PBF | IRFB3077PBF | IRFB3307ZPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Drain-to-Source Voltage V(BR)DSS | 75 V | 75 V | 100 V | 75 V | 75 V |
| Continuous Drain Current (Tc=25°C) | 62 A | 75 A | 120 A | 120 A | 130 A |
| RDS(on) typical at VGS=10V | 12.6 mΩ | 6.5 mΩ | 4.5 mΩ | 3.3 mΩ | 3.2 mΩ |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Total Gate Charge (Qg) | 110 nC typical | 120 nC | 160 nC | 190 nC | 180 nC |
| RoHS Compliance | Yes (Lead-Free, PBF) | Yes | Yes | Yes | Yes |
| Approximate Unit Price (qty-1000) | $0.92 | $1.10 | $1.65 | $1.85 | $1.45 |
Bảo phân biệt quan trọng
- Lower RDS(on) drop-in alternatives available with same D2PAK footprint (vsIRFB3207ZPBF)
- Higher voltage headroom option for 100 V bus systems (vsIRFB4110PBF)
- Lower conduction loss option for 75 V high-current designs (vsIRFB3077PBF)
Ghi chú thiết kế
The IRF3007STRLPBF has a junction-to-case thermal resistance (RθJC) of 1.0 °C/W and junction-to-ambient (RθJA) of 40 °C/W. At 62 A continuous drain current with 30 V VDS (worst-case switching), conduction loss alone is approximately 48 W (I² × RDS(on) = 62² × 0.0126), far exceeding the 120 W package rating only if Tj reaches 175 °C. Estimated: at 48 W dissipation with RθJA = 40 °C/W, junction rises 1920 °C above ambient - clearly impractical. A heatsink limiting RθJA to under 2 °C/W is mandatory for continuous operation above 10 A. Always compute Tj = Ta + (Pd × RθJA) and keep Tj below 150 °C for long-term reliability.
The D2PAK tab is internally connected to the drain (pin 2). Solder the tab to a substantial PCB copper pour - ideally 1 oz copper covering at least 1 square inch on the top layer, plus thermal vias to inner copper planes - to minimize RθJA. For continuous currents above 20 A, supplement the PCB copper with a clip-on or bolt-down heatsink using thermal interface material. Keep the gate-drive trace short (under 25 mm) and use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing between gate-drain capacitance and source-lead inductance.
Do not operate the IRF3007STRLPBF with VGS below 6 V - partial enhancement increases RDS(on) dramatically and can cause thermal runaway. Ensure the gate-drive voltage reaches 10 V minimum at the gate pin, accounting for any voltage drop across the gate resistor during turn-on. Avoid exceeding the avalanche energy rating during inductive switching - add a flyback diode or TVS clamp across inductive loads. Finally, verify that the drain-to-source voltage stays below 60 V (80% derating) under all transient conditions, including load-dump and reverse-battery events in automotive environments.
Thông tin tuân thủ
RoHS compliant per Infineon product page - 'PBF' suffix indicates lead-free (Pb-free) termination. Lead-free and halogen-free per Infineon material declaration. Conflict-minerals compliant per Infineon supply chain policy. NOT AEC-Q100/AEC-Q101 qualified - use AUIRF7640S2TR or similar automotive-grade parts for OEM automotive applications.
