K4A8G085WC-BCWE - 8Gb DDR4-3200 DRAM 1.2V | Samsung
MPN: K4A8G085WC-BCWE ✓ Hoạt độngK4A8G085WC-BCWE Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR DRAM and the dominant main-memory technology in computing systems. Within the memory hierarchy, DRAM sits between CPU caches and storage, and DDR4 improved on DDR3 by lowering operating voltage from 1.5 V to 1.2 V, doubling bank groups, and raising data rates up to 3200 Mbps and beyond. As a power management IC-adjacent component, it requires a VDD/VDDQ rail at 1.2 V and precision power-up sequencing.
Key features of the K4A8G085WC-BCWE include the 8 Gb density in a x8 organization, the DDR4-3200 speed bin for high-bandwidth applications, 1.2 V core and I/O operation for reduced power versus DDR3, and the space-saving 78FBGA surface-mount package. The C-die generation offers improved bit density per die, reducing chip count in high-capacity designs.
Architecturally, the device uses DDR4 bank-group architecture with 8n prefetch, on-die termination (ODT), and DDR4-standard command/address training, allowing seamless integration with standard DDR4 memory controllers from AMD Ryzen, Intel, and embedded processor platforms.
Typical applications include desktop and laptop main memory, embedded industrial controllers, computing modules (COM Express, SODIMM-based designs), networking equipment, and replacement sourcing for DDR4-based BOMs.
Design consideration: DDR4 requires correct power-up initialization sequencing and controller training (write leveling, read training); the exact speed bin suffix (-BCWE = DDR4-3200) must match controller timing assumptions.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho K4A8G085WC-BCWE — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4A8G085WC-BCWE (cùng hình factor và footprint) — khác nhau ở Interface, Package, Data Rate, RoHS Status, Bank Group Architecture.
K4A8G085WC-BIWE
Liên hệ để biết giá
Xem tài liệu →K4A8G085WC-BCTD
Liên hệ để biết giá
Xem tài liệu →K4A8G085WC-BCRC
Liên hệ để biết giá
Xem tài liệu →K4A8G085WC-BCPB
Liên hệ để biết giá
Xem tài liệu →K4A8G085WB-BCWE
Liên hệ để biết giá
Xem tài liệu →K4A8G085WC-BCWE Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Density | 8 Gb |
| Tổ chức | 1G x 8 |
| Tốc độ dữ liệu | 3200 Mbps (DDR4-3200) |
| Điện áp cung cấp | 1.2 V |
| Nhiệt độ hoạt động | 0C to +85C |
| Hộp | 78FBGA |
| Kiểu lắp đặt | Surface Mount |
| Giao diện | DDR4 (parallel, double data rate) |
| Application Class | Computing / Embedded main memory |
| Manufacturer | Samsung Electronics |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) |
| Trạng thái RoHS | Compliant (per JLCPCB listing) |
| Refresh | Standard DDR4 refresh mechanisms |
| On-Die Termination | Yes (DDR4 ODT) |
Hướng dẫn cấu hình chân K4A8G085WC-BCWE 78fbga
Cấu hình chân cho K4A8G085WC-BCWE (78fbga gói). IC số này bao gồm chân GPIO, giao diện truyền thông (UART, SPI, I2C) và chân nguồn. Tham khảo tài liệu thông số kỹ thuật của nhà sản xuất để biết các chức năng chân thay thế và tùy chọn cấu hình. Cực kỳ quan trọng cho thiết kế hệ thống tích hợp và lập trình PCB.
Không có dữ liệu chân cụ thể sẵn có cho K4A8G085WC-BCWE.
Tham khảo: tài liệu kỹ thuật cho cấu hình chân đầy đủ.
Ứng dụng tiêu biểu
K4A8G085WC-BCWE phù hợp cho 6 Áp dụngs: Desktop and Workstation Main Memory, Embedded Industrial Controllers, Networking and Communication Equipment, Computing Modules (COM Express / SODIMM Carrier Boards), Replacement Sourcing and BOM Continuity, Gaming and Graphics Workloads.
Desktop and Workstation Main Memory
The K4A8G085WC-BCWE serves as discrete main memory in desktop and workstation platforms, where its DDR4-3200 data rate delivers 25.6 GB/s of peak bandwidth per 64-bit channel. The 8 Gb, 1G x 8 organization allows module designers to build 8 GB UDIMMs with eight chips or 16 GB DIMMs with sixteen, all on the fly-by command/address topology DDR4 mandates. Its listing on AMD Ryzen validator lists and Intel DRAM compatibility lists confirms platform acceptance. Compared with DDR3 predecessors, the 1.2 V supply cuts memory subsystem power significantly, improving thermal design margin in compact cases. Designers should confirm the memory controller supports the -BCWE timing tables via BIOS memory training before release.
Được đề xuất
Embedded Industrial Controllers
Industrial controllers, IPCs, and HMI panels use the K4A8G085WC-BCWE as code and data memory alongside processors such as the TI AM263P or NXP i.MX families. The 8 Gb density in a single 78FBGA die simplifies BOM and board space compared with stacking smaller chips, while the DDR4-3200 bin gives headroom for frame buffers and logging workloads. Because industrial environments demand wider temperature ranges, designs targeting -40C should instead use the pin-identical K4A8G085WC-BIWE industrial variant, which requires zero PCB redesign per Samsung's migration guide. Layout must follow DDR4 fly-by routing with ODT tuning; the 1.2 V VDDQ rail needs a low-noise buck regulator such as the TPS54218 for clean power.
Được đề xuất
Networking and Communication Equipment
Routers, switches, and network appliances rely on the K4A8G085WC-BCWE for packet buffering, routing tables, and control-plane memory. The x8 organization and 3200 Mbps per-pin rate provide the sustained bandwidth needed for gigabit and multi-gigabit line-rate forwarding, while 8 Gb per chip keeps chip count low on dense line cards. DDR4 bank-group architecture with 8n prefetch improves random-access efficiency for scattered packet buffers, an advantage over DDR3 in network workloads. Thermal conditions in fanless or constrained networking enclosures favor the 1.2 V operating voltage, which lowers DRAM idle and active power relative to DDR3-era parts. Validate the speed bin against the network processor's supported DDR4 frequency before layout.
Được đề xuất
Computing Modules (COM Express / SODIMM Carrier Boards)
Computer-on-module carrier designs and SODIMM-based embedded systems use the K4A8G085WC-BCWE either as soldered-down memory on the module or as reference for module DRAM qualification. The 78FBGA package supports the standard DDR4 land pattern used across carrier and module boards, enabling drop-in substitution among Samsung speed bins (BCTD, BCRC, BCPB) during supply shortages without PCB respins - a critical advantage for long-lifecycle embedded products. The DDR4-3200 rating matches the memory interface speed of modern embedded x86 and ARM SoCs used in COM Express Type 6 and Type 10 modules. Power-up initialization and training sequences must follow the Samsung datasheet exactly to pass BIOS-level memory training.
Được đề xuất
Replacement Sourcing and BOM Continuity
As Samsung shifts capacity toward DDR5 and HBM, buyers maintaining legacy DDR4-based products use the K4A8G085WC-BCWE and its family members for last-time-buy and continuity planning. The verified cross-reference data shows the full ordering code - not just the 8 Gb headline - determines substitution safety: organization, package, temperature class, speed bin, and die generation (WB vs WC) must all match controller assumptions. This page's alternatives table ranks the K4A8G085WC-BIWE, -BCTD, -BCRC, and -BCPB by parametric proximity, letting procurement prioritize validated drop-ins. Buyers should verify date codes and run incoming inspection when sourcing DDR4 through secondary distributors, since market volatility has increased counterfeit risk in this segment.
Được đề xuất
Gaming and Graphics Workloads
Gaming consoles, GPUs with discrete memory controllers, and high-frame-rate graphics workloads use the K4A8G085WC-BCWE where GDDR is unnecessary but sustained bandwidth matters. The DDR4-3200 speed bin supplies 25.6 GB/s per 64-bit channel, and multiple x8 devices can be ganged into 128-bit or 256-bit buses for proportionally higher aggregate bandwidth. On-die termination reduces the external component count needed for high-speed signal integrity, cutting BOM cost on multi-chip graphics boards. The 1.2 V rail simplifies power delivery versus DDR3's dual 1.5 V/1.35 V schemes, important in thermally constrained GPU boards. Designers should place the DRAM within tight length-matching windows and validate eye diagrams at 3200 Mbps on their stackup.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4A8G085WC-BCWE — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4A8G085WC-BIWE | K4A8G085WC-BCTD | K4A8G085WC-BCRC | K4A8G085WC-BCPB | K4A8G085WB-BCWE |
|---|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps (industrial grade) | 2666 Mbps (DDR4-2666) | 2400 Mbps (DDR4-2400) | 2133 Mbps class | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | -40C to +85C (industrial) | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Die Generation | C-die | C-die | C-die | C-die | C-die | B-die (timing differences) |
Bảo phân biệt quan trọng
- Fastest speed bin in the WC family (vsK4A8G085WC-BCTD)
- C-die timing consistency (vsK4A8G085WB-BCWE)
- Commercial-temperature cost advantage (vsK4A8G085WC-BIWE)
Ghi chú thiết kế
Power the K4A8G085WC-BCWE from a clean 1.2 V rail for both VDD and VDDQ. A synchronous buck such as the TI TPS54218 with 22 uF of bulk and per-ball 100 nF decoupling provides the low ripple DDR4 requires. Follow the Samsung datasheet power-up initialization sequence exactly: stabilize VDD before applying CK/CK# and completing reset/controller initialization, otherwise memory training may fail intermittently.
DDR4-3200 signaling (1600 MHz clock, 3200 Mbps per pin) demands disciplined fly-by command/address routing and per-byte length-matched data groups. Use on-die termination (ODT) settings from the controller training algorithm and simulate eye diagrams on your stackup. Slower bins (-BCRC at 2400 Mbps) tolerate looser geometry, so if SI margin is insufficient at 3200 Mbps, switching to the drop-in BCTD/BCRC speed bin recovers margin without PCB respin.
Do not substitute B-die (K4A8G085WB) and C-die (K4A8G085WC) parts without validation: cross-reference analysis reports critical timing differences between the generations despite identical 8 Gb/x8/3200/78FBGA headline specs. Also verify the temperature suffix - the -BCWE commercial grade (0C to +85C) is not a substitute for industrial designs; use the -BIWE. Finally, cross-brand DDR4 swaps (Micron/Hynix) require controller supported-MPN validation and are not true drop-ins.
Thông tin tuân thủ
RoHS compliant per JLCPCB and LCSC product listings. REACH, halogen-free, and conflict-minerals declarations not present in retrieved data; request formal certificates from Samsung if required.
