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Samsung Electronics

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM x8 2666Mbps | Samsung

MPN: K4A8G085WC-BCTD ✗ End of Life
In Stock Ships in 1-3 business days
1.2 V Vdss 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) Package DDR4-2666 Speed DDR4 SDRAM Memory
From $48.04 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $60.05 $60.05
10 $57.05 $570.50
100 $54.05 $5,405.00
500 $51.05 $25,525.00
1,000 $48.04 $48,040.00
ℹ️ All prices are in USD

Drop-in alternatives for K4A8G085WC-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A8G085WC-BIWE

✅ Drop-In
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 1.2 V · -40°C to +95°C · 78-FBGA

✓ In Stock

$6.29 / Unit

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K4A8G085WC-BCRC

✅ Drop-In
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gbit · 1G x 8 · 1.2 V · 2400 Mbps (DDR4-2400) · 78-ball FBGA (TFBGA) · 0.8 mm · Surface Mount

✓ In Stock

$4.3 / Unit

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K4A8G085WC-BCPB

✅ Drop-In
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 2133 Mbps · 1.2 V · 0 C to +85 C · 78FBGA · 78

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$2.95 / Unit

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K4A8G085WB-BCTD

✅ Drop-In ⚠️ 参数待验证
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb (1G x 8) · 1.2 V · 3200 Mbps (PC4-25600) · CL22-22-22 · FBGA-78 (TFBGA) · 0°C to +95°C (TC) · 8 (BL8)

✓ In Stock

$7.5 / Unit

View Datasheet →

K4A8G085WG-BCWE

✅ Drop-In
📦 78-ball FBGA
DDR4-3200 speed grade vs DDR4-2666 (+20% data rate), same 8Gb x8 78-ball FBGA footprint

📋 Reference alternative (not in catalog)

K4A8G085WC-BCTD Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gbit
Organization 1G x 8
Speed Grade DDR4-2666
Core Supply Voltage (VDD) 1.2 V
I/O Supply Voltage (VDDQ) 1.2 V
Interface Double Data Rate, differential clock (CK/CK#)
Package 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)
Mounting Type Surface Mount
Operating Temperature 0C to +95C
Features Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask
JEDEC Compliance JEDEC DDR4 standard compatible
Precharge Auto precharge function
Reset Asynchronous reset function
Termination Dynamic on-chip termination (ODT)
Data Mask Supported

K4A8G085WC-BCTD 78-ball fbga (9 x 11 mm, 0.8 mm pitch) Pin Configuration Guide

Complete pinout information for K4A8G085WC-BCTD (78-ball fbga (9 x 11 mm, 0.8 mm pitch) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

78-ball fbga (9 x 11 mm, 0.8 mm pitch) package pinout diagram for K4A8G085WC-BCTD

No detailed pinout data available for K4A8G085WC-BCTD.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4A8G085WC-BCTD Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4A8G085WC-BCTD is suitable for 6 applications: Desktop and Notebook DIMMs, Embedded Single-Board Computers, Networking and Telecom Equipment, Industrial Automation Controllers, Set-Top Boxes and Smart TVs, Point-of-Sale and Retail Terminals.

🖥️

Desktop and Notebook DIMMs

The K4A8G085WC-BCTD is a core building block for UDIMM and SODIMM modules in consumer PCs. Its 8Gb density in x8 organization allows 8 GB modules from just eight chips, and its DDR4-2666 speed bin matches mainstream 12th-generation-and-earlier Intel and AMD memory controllers. The device's dynamic on-chip termination (ODT) and ZQ calibration maintain signal integrity at 2666 Mbps across the module's stub-heavy routing, where external termination would add cost and board area. Placed on a standard 288-pin DIMM at 1.2V, the chip runs from the module's shared VDD rail with 0.1 uF decoupling per ball pair. For module makers still servicing the DDR4Installed base, this EOL part is available via last-buy channels, though die-revision WC offers improved power figures versus earlier WB-based modules.

🧩

Embedded Single-Board Computers

Soldered-down K4A8G085WC-BCTD components provide 1 GB of DDR4 system memory per chip on single-board computers, edge gateways, and embedded controllers. The 78-ball FBGA with 0.8 mm pitch supports standard six-layer stackups, and the asynchronous reset plus CRC features simplify integration with SoC memory controllers from NXP, TI, and Rockchip. At DDR4-2666, a single x8 device delivers 2.1 GB/s per pin pair, sufficient for Linux-class workloads. The 1.2V rail reduces total board power versus DDR3, roughly 35% lower core power, which matters in passively cooled enclosures. Designers should implement the JEDEC power-up sequence in firmware and enable ZQ calibration at boot. Because the part is EOL, new embedded designs should qualify the pin-compatible K4A8G085WC-BIWE industrial variant for long-term supply.

🌐

Networking and Telecom Equipment

Enterprise switches, routers, and PON equipment use K4A8G085WC-BCTD devices as buffer memory for packet processing. The CRC feature on the command/address bus adds a hardware error check on control signals, valuable in 24/7 infrastructure where a single corrupted refresh command can crash a line card. DDR4-2666 provides the bandwidth needed for multi-gigabit packet buffering when several x8 devices are byte-laned together on a 64-bit bus. The 0C to +95C rating covers central-office ambient conditions, and dynamic ODT helps terminate shared data buses during turnarounds. Telecom vendors facing the DDR4 EOL notice should complete last-time-buy evaluation now or migrate to the BIWE industrial variant, which requires no PCB or firmware changes.

🏭

Industrial Automation Controllers

PLC CPUs, motion controllers, and vision-system processors rely on soldered DDR4 like the K4A8G085WC-BCTD for program and image-buffer memory. The 8Gb density supports machine-vision frame buffers and Windows/Linux real-time runtimes, while the -BCTD speed bin at 2666 Mbps keeps deterministic access latency low for cyclic control tasks. Operation from 0C to +95C suits cabinet-mounted electronics; for shop-floor enclosures approaching the upper limit, the industrial-grade BIWE sibling with the same footprint is the documented migration path. Power dissipation at 1.2V remains under 1 W per device at typical bandwidth, easing conduction-cooled thermal design. Designers must honor the JEDEC initialization sequence and program mode registers for their specific controller timing before production sign-off.

📺

Set-Top Boxes and Smart TVs

Consumer AV platforms use the K4A8G085WC-BCTD as main memory for 4K video decoding, with its 8Gb capacity comfortably holding dual 4K frame buffers plus an Android or Linux runtime. At 1.2V and DDR4-2666, a single x8 chip provides the ~2 GB/s bandwidth required for HEVC decode pipelines, and the data mask function enables efficient partial writes during graphics compositing. The 0.8 mm-pitch FBGA reflows onto standard consumer four- or six-layer boards, and low core power helps meet energy-star standby budgets. Since the part is now EOL as Samsung shifts to DDR5, consumer OEMs should validate the WC-BCRC/BCPB grade equivalents or requalify BIWE to secure supply through remaining product lifecycles.

🛒

Point-of-Sale and Retail Terminals

POS terminals, kiosks, and receipt printers use the K4A8G085WC-BCTD soldered down for 1 GB of system memory driving secure-payment and touch-screen software stacks. The x8 FBGA format withstands the vibration and thermal cycling of countertop retail hardware better than socketed DIMMs, and 1.2V operation limits heat inside sealed enclosures without fans. The asynchronous reset input allows the host CPU to recover the DRAM after a brown-out without full power cycling, shortening recovery time to under a second in the field. With the device's EOL status, retail-hardware makers with 5- to 10-year service commitments should place last-time buys or requalify the pin-compatible K4A8G085WC-BIWE, which adds industrial temperature margin at zero redesign cost.

What is the K4A8G085WC-BCTD?
The Samsung K4A8G085WC-BCTD is an 8-gigabit DDR4 SDRAM component organized as 1G x 8 bits, rated for DDR4-2666 operation, in a 78-ball FBGA package with 0.8 mm ball pitch. It operates from a 1.2V supply across 0C to +95C and supports auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-chip termination, and data mask functions, according to Samsung's K4A8G085WC datasheet and LCSC product data.
What is the operating voltage of K4A8G085WC-BCTD?
The K4A8G085WC-BCTD operates from a nominal 1.2V supply for both VDD (core) and VDDQ (I/O), per Samsung's DDR4 datasheet for the K4A8G085WC family. This low-voltage operation is a defining DDR4 characteristic inherited from the JEDEC DDR4 standard, delivering roughly 35% lower core power than DDR3's 1.5V. Ensure your power rail maintains the DDR4-specified tolerance band, because DRAM timing parameters are only guaranteed within that window.
What is the price of K4A8G085WC-BCTD?
As of 2026-09-04, LCSC lists the K4A8G085WC-BCTD from $60.05 per unit in single-piece quantities. Because Samsung has issued EOL notices for legacy DDR4 parts, gray-market and broker pricing fluctuates significantly; last-batch stock is frequently sold at a premium through RFQ channels such as Win Source, Avaq, and Wolfchip. Always request an RFQ for volume pricing on this part rather than assuming standard DRAM commodity pricing.
Where can I buy K4A8G085WC-BCTD online?
As of 2026-09-04, the K4A8G085WC-BCTD is listed by LCSC (20 pieces in stock, from $60.05), Wolfchip (15,080 pieces reported Aug 19, 2026), Win Source, Avaq, Sourcengine, and IC-Components, all supporting RFQ or direct purchase. Given the part's EOL status from Samsung's DDR4-to-DDR5 transition, verify date codes and traceability before ordering, and consider last-time-buy quantities if your production plan extends beyond current broker inventory.
What is the best drop-in replacement for K4A8G085WC-BCTD?
The best drop-in replacement for the K4A8G085WC-BCTD is the Samsung K4A8G085WC-BIWE, which is 100% pin-compatible and layout-compatible, requiring zero PCB redesign, according to an iCallin procurement guide checked in 2026; the BIWE is the industrial-temperature variant of the same die and package. Within the same speed class, K4A8G085WC-BCRC and K4A8G085WC-BCPB are same-package family members; verify speed-bin acceptance with your memory controller before substitution.
What is the difference between K4A8G085WC-BCTD and K4A8G085WB-BCTD?
The difference lies in the silicon die revision: WC is a later process node than WB in Samsung's 8Gb DDR4 lineup, while the -BCTD suffix (DDR4-2666 speed grade) and 78-ball FBGA x8 package are shared. Both are 8Gb, 1G x 8 DDR4 parts that typically drop into the same footprint. Because die-revision changes can subtly alter timing derating and power figures, consult both datasheets and your controller's memory-training results when substituting WC for WB.
K4A8G085WC-BCTD vs Micron MT40A1G8SA-062E - are they interchangeable?
No - the Samsung K4A8G085WC-BCTD is not a direct drop-in replacement for the Micron MT40A1G8SA-062E. According to IC-Components, the two differ in timing parameters, VDDQ voltage tolerance, and power-up sequencing requirements, despite both being 8Gb DDR4 x8 devices in similar FBGA packages. Cross-brand DDR4 swaps at the component level require re-validation of initialization sequences and possibly memory-controller retraining, so treat them as board-level equivalents rather than pin-to-pin substitutes.
Is K4A8G085WC-BCTD obsolete or EOL?
Yes. Multiple 2026 industry sources, including iCallin migration guides and LinkedIn supply-chain posts, report that Samsung has issued End-of-Life notices for the K4A8G085WC-BCTD as it phases out legacy DDR4 nodes in favor of DDR5 and HBM. The recommended migration path is the pin-compatible Samsung K4A8G085WC-BIWE industrial variant. Plan last-time-buy quantities or qualify BIWE equivalents now, since broker inventory of the BCTD is finite and gray-market pricing is rising.
Where can I download the K4A8G085WC-BCTD datasheet PDF?
The K4A8G085WC-BCTD datasheet is available as the Samsung K4A8G085WC DDR4 SDRAM datasheet (23 pages, approximately 961 KB) from Alldatasheet, and PDF downloads are also offered by DigChip, Win Source, LCSC, and Avaq. Per Data Authenticity rules, note that distributor-hosted copies may lag the latest Samsung revision, so for final design sign-off download the current revision from Samsung's official semiconductor website product page for K4A8G085WC.
What package does K4A8G085WC-BCTD use and what is its pinout?
The K4A8G085WC-BCTD is packaged in a 78-ball FBGA measuring 9 x 11 mm with a 0.8 mm ball pitch, per LimChip and Samsung's datasheet. The ball map follows the JEDEC-standard DDR4 x8 footprint: 8 DQ data balls, differential clock CK/CK#, 17 command/address balls with 2 CA parity options, DM/DBI, DQS/DQS# strobes, power and ground balls. Refer to the Samsung K4A8G085WC datasheet ball-map table for the complete ball-by-ball listing before layout.
What are the key specifications of K4A8G085WC-BCTD that engineers should know?
Key facts: 8 Gbit DDR4 SDRAM, 1G x 8 organization, DDR4-2666 speed bin, 1.2V VDD/VDDQ, 78-ball FBGA (9 x 11 mm, 0.8 mm pitch), 0C to +95C operation. Feature set: auto precharge, asynchronous reset, CRC and ZQ calibration, dynamic on-chip termination, and data mask. This JEDEC DDR4 device is now EOL per Samsung's DDR4 sunset, with the K4A8G085WC-BIWE as the documented pin-compatible replacement.
Is K4A8G085WC-BCTD suitable for industrial applications?
Partially. The standard K4A8G085WC-BCTD is rated 0C to +95C, which covers many industrial enclosures but not extended cold environments. For industrial-grade requirements, Samsung's K4A8G085WC-BIWE variant offers the same die, footprint, and pinout with an industrial temperature rating, and is documented as a zero-redesign drop-in replacement. For factory automation, networking, or POS hardware that operates indoors at standard commercial ambient, the BCTD's 0C to +95C window is typically sufficient.
How should power-up sequencing be handled for K4A8G085WC-BCTD?
DDR4 devices require defined power-up sequencing: apply VDD and VDDQ (both 1.2V on this part) with the reset (RESET#) held low, then after the power rails stabilize and the minimum reset duration elapses, release RESET# and begin the JEDEC DDR4 initialization sequence including ZQ calibration (ZQCL) and mode register programming. An incorrect sequence can leave the DRAM in an undefined state. Always follow the controller vendor's reference initialization code and Samsung's K4A8G085WC datasheet power-up section.
What is the Samsung equivalent for K4A8G085WC-BCTD at the same speed grade?
Samsung's own equivalents include K4A8G085WC-BCRC and K4A8G085WC-BCPB, which share the WC die and 78-ball FBGA x8 package but differ in speed/grade coding, and the K4A8G085WB-BCTD, which is the WB die revision in the identical BCTD speed bin. For industrial temperature, K4A8G085WC-BIWE is documented as a 100% pin-compatible drop-in. Verify your memory controller's approved speed-bin list before committing any substitution in production.
Is K4A8G085WC-BCTD in stock, and what is the lead time?
As of 2026-09-04, LCSC reports 20 pieces in stock, and Wolfchip reported 15,080 pieces on August 19, 2026, with immediate shipment offered by several brokers. However, because the part is EOL, lead times and quantities change weekly, and gray-market stock carries counterfeit risk. For production volumes, expect 8 to 16 week lead times from authorized excess-inventory channels, and qualify the BIWE drop-in as a hedge against stock-out.
Does K4A8G085WC-BCTD support CRC and on-chip termination?
Yes. According to LCSC's feature summary and Samsung's datasheet, the K4A8G085WC-BCTD supports CRC (cyclic redundancy check) for command/address error detection, ZQ calibration for output-impedance accuracy, and dynamic on-chip termination (ODT), which replaces external termination resistors and improves signal integrity at DDR4-2666 speeds. The device also provides auto precharge, asynchronous reset, and data mask functions, forming the complete DDR4 feature set expected of JEDEC-standard x8 components.

Engineering reference data for K4A8G085WC-BCTD — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A8G085WC-BCTD when you need an 8Gb DDR4 x8 component at DDR4-2666 and your design is already qualified for it - but given its 2026 EOL status, prefer the pin-compatible Samsung K4A8G085WC-BIWE for any new or long-lifecycle industrial design, since it requires zero PCB redesign and adds temperature margin. Choose K4A8G085WB-BCTD only if you must match an earlier BOM's die revision; the WC die typically offers equal-or-better power. Choose K4A8G085WG-BCWE if your memory controller supports DDR4-3200 and you need 20% more bandwidth, accepting the higher speed-bin cost. Do not swap in the Micron MT40A1G8SA-062E without full re-validation, because timing, VDDQ tolerance, and power-up sequencing differ per IC-Components. For new designs overall, Samsung's DDR4 EOL makes early qualification of the BIWE variant the safest supply-chain hedge.

Comparison with Alternatives

Parameter This Product K4A8G085WC-BIWE K4A8G085WC-BCRC K4A8G085WB-BCTD K4A8G085WG-BCWE
Package 78-ball FBGA (9 x 11 mm) 78-ball FBGA - same 78-ball FBGA - same 78-ball FBGA - same 78-ball FBGA - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 1G x 8 1G x 8 1G x 8 1G x 8 1G x 8
Speed Grade DDR4-2666 [DATA_NEEDED] [DATA_NEEDED] DDR4-2666 DDR4-3200
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature 0C to +95C Industrial grade (extended) [DATA_NEEDED] 0C to +95C 0C to +95C
Lifecycle Status EOL Recommended EOL migration path [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Documented EOL migration path within same footprint (vs K4A8G085WC-BIWE)
  • Later WC die revision for lower power (vs K4A8G085WB-BCTD)
  • DDR4-2666 cost-optimal speed bin (vs K4A8G085WG-BCWE)

Design Notes

Both VDD and VDDQ are 1.2V on the K4A8G085WC-BCTD. Budget approximately 0.1 uF of ceramic decoupling per power/ground ball pair placed within 2 mm of the package, plus bulk capacitance sized to the full bus. Estimated: at DDR4-2666 with moderate utilization, per-device current can approach several hundred mA on VDDQ; size the 1.2V rail regulator for the full x8 byte-lane count plus 30% margin. DDR4 power-up sequence requires RESET# held low until rails stabilize per JEDEC initialization.

At 2666 Mbps, use length-matched fly-by command/address routing and enable the device's dynamic on-chip termination (ODT) and ZQ calibration rather than external termination resistors. ZQ calibration should be run at initialization and periodically (ZQCS) to track temperature-driven impedance drift - the datasheet-specified calibration window is short and must not be violated. For data lines, reference to a solid ground plane and avoid stubs on DQ/DQS nets; simulate eye diagrams at your trace lengths before sign-off.

Do not substitute the Micron MT40A1G8SA-062E for this part without re-validation: IC-Components notes differences in timing parameters, VDDQ tolerance, and power-up sequencing. Also note the part's EOL status - plan BOM migration to K4A8G085WC-BIWE (100% pin/layout compatible) before broker stock depletes. Finally, gray-market BCTD parts carry counterfeit risk; verify date codes and purchase from traceable distributors such as LCSC or Sourcengine.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not stated in the provided distributor data; consult Samsung's official product page and environmental datasheet.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K4A8G085WC-BCTD K4A8G085WC-BIWE K4A8G085WB-BCTD K4A8G085WG-BCWE MT40A1G8SA-062E DDR4 SDRAM DRAM volatile memory JEDEC DDR4 standard 78-ball FBGA VQFN package family (surface mount) 1.2V VDD/VDDQ DDR4-2666 ZQ calibration dynamic on-chip termination CRC auto precharge EOL (end-of-life) DIMM embedded single-board computer networking buffer memory
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