MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MPN: MT40A1G8SA-075:E ✓ Hoạt độngMT40A1G8SA-075:E Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower operating voltage (1.2V), and improved power efficiency. DDR4 is a critical component in modern computing systems, servers, and embedded devices, forming the main memory hierarchy alongside storage and cache.
Key features of the MT40A1G8SA-075:E include a supply voltage of VDD = VDDQ = 1.2V ±60mV, with VPP at 2.5V (-125mV, +250mV). It supports on-die, internal, adjustable VREFDQ generation and 1.2V pseudo open-drain I/O. The device offers a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. Additional features include write leveling, dynamic on-chip termination, CRC function, and data mask function, ensuring signal integrity and reliable operation.
Technically, the MT40A1G8SA-075:E utilizes Micron's advanced DRAM process technology, achieving high density and performance while maintaining low power. The 78-ball FBGA package with a 7.5x11 mm footprint is optimized for space-constrained PCB designs, offering excellent thermal and electrical characteristics. The device supports a data rate of 2666 MT/s, providing a peak bandwidth of 21.3 GB/s per module (when paired with a 64-bit bus).
Typical applications include high-performance computing, servers, networking equipment (routers, switches), and industrial automation systems. Its high speed and reliability make it suitable for memory-intensive tasks such as data analytics, virtualization, and real-time processing. The low operating voltage contributes to energy-efficient designs, crucial for data centers and battery-powered devices.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful attention to the VPP rail for optimal performance.
Bộ thay thế dễ dàng lắp đặt cho MT40A1G8SA-075:E — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT40A1G8SA-075:E (cùng hình factor và footprint) — khác nhau ở Data Rate, Package, Operating Temperature, Memory Type, Density.
MT40A1G8SA-062E
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MT40A1G8AG-062E:R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A512M16JY-083E IT:B TR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8SA-062E IT:R TR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
K4A8G085WB-BIWE
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →MT40A1G8SA-075:E Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | SDRAM - DDR4 |
| Kích thước bộ nhớ | 8Gbit (1G x 8) |
| Giao diện | Parallel |
| Clock Frequency | 1.33 GHz |
| Tốc độ dữ liệu | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) |
| Khoảng nhiệt độ hoạt động | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Hộp | 78-FBGA (7.5x11 mm) |
| Kiểu lắp đặt | Surface Mount |
| Write Leveling | Supported |
| Dynamic On-Chip Termination | Supported |
| CRC Function | Supported |
| Data Mask Function | Supported |
| Trạng thái RoHS | Compliant |
Cấu hình chân MT40A1G8SA-075:E
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ2 — Data input/output 2 |
| Chân B3 | DQ3 — Data input/output 3 |
| Chân C1 | VDDQ — I/O power supply |
| Chân C2 | DQS_t — Data strobe (true) |
| Chân C3 | DQS_c — Data strobe (complement) |
| Chân D1 | VSSQ — I/O ground |
| Chân D2 | DM_n — Data mask (active low) |
| Chân D3 | VDD — Power supply |
Ứng dụng tiêu biểu
MT40A1G8SA-075:E phù hợp cho 6 Áp dụngs: High-Performance Computing, Networking Equipment, Industrial Automation, Data Center Servers, Embedded Systems, Telecommunications.
High-Performance Computing
The MT40A1G8SA-075:E provides 8Gbit DDR4-2666 memory with a parallel interface, ideal for HPC systems requiring high bandwidth and low latency. Its 1.2V operation reduces power consumption, while the 78-FBGA package enables dense memory arrays. In servers and workstations, it supports multi-channel configurations to achieve aggregate bandwidth exceeding 100 GB/s. The device's CRC and data mask functions ensure data integrity in demanding computational workloads.
Được đề xuất
Networking Equipment
In routers, switches, and network appliances, the MT40A1G8SA-075:E offers high-speed DDR4 memory for packet buffering and forwarding tables. Its 1.33 GHz clock and 8Gbit density provide ample capacity for routing tables and QoS queues. The low operating voltage helps manage thermal budgets in compact networking hardware. Write leveling and dynamic ODT improve signal integrity on high-speed buses, ensuring reliable operation in 24/7 environments.
Được đề xuất
Industrial Automation
The MT40A1G8SA-075:E is suitable for industrial controllers and PLCs requiring reliable memory with a wide temperature range (0°C to +95°C). Its 8Gbit density supports complex control algorithms and data logging. The 1.2V supply reduces power dissipation in sealed enclosures. The device's robust design and support for CRC ensure data integrity in electrically noisy factory environments. It can be paired with industrial-grade MCUs for real-time control.
Được đề xuất
Data Center Servers
In data center servers, the MT40A1G8SA-075:E provides high-density, high-bandwidth memory for virtualization, databases, and cloud applications. Its DDR4-2666 speed and 8Gbit density enable large memory pools with low power consumption. The 78-FBGA package allows high-density DIMM designs. The device's low operating voltage contributes to energy efficiency, reducing cooling costs. It supports ECC and CRC features for reliable operation in mission-critical environments.
Được đề xuất
Embedded Systems
The MT40A1G8SA-075:E is ideal for embedded systems requiring high memory bandwidth in a compact form factor. Its 8Gbit density and 1.33 GHz clock support demanding applications like real-time video processing and AI inference. The 1.2V supply is compatible with modern low-power SoCs. The device's small FBGA package saves PCB space, and its support for write leveling simplifies layout. It is commonly used in single-board computers and edge devices.
Được đề xuất
Telecommunications
In telecom infrastructure, the MT40A1G8SA-075:E provides reliable memory for base stations and switches. Its high speed and density support large routing tables and call processing. The device's wide temperature range and low power make it suitable for outdoor and remote installations. The 78-FBGA package is robust for harsh environments. It supports features like dynamic ODT and CRC, ensuring signal integrity over long PCB traces.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT40A1G8SA-075:E — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT40A1G8SA-062E | MT40A1G8AG-062E:R | K4A8G085WB-BIWE | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|
| Package | 78-FBGA (7.5x11 mm) | 78-FBGA (7.5x11 mm) | 78-FBGA (7.5x11 mm) | 78-FBGA (7.5x11 mm) | 78-FBGA (7.5x11 mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8Gbit (1G x 8) | 8Gbit (1G x 8) | 8Gbit (1G x 8) | 8Gbit (1G x 8) | 8Gbit (1G x 8) |
| Data Rate | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s | 2666 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Write Leveling | Supported | Supported | Supported | Supported | Supported |
| CRC Function | Supported | Supported | Supported | Supported | Supported |
Bảo phân biệt quan trọng
- Lower speed grade for cost optimization (vsMT40A1G8SA-062E)
- Same package and pinout as higher-speed variants (vsMT40A1G8SA-062E)
- Cross-brand compatibility (vsK4A8G085WB-BIWE)
Ghi chú thiết kế
For high-speed DDR4 routing, maintain controlled impedance of 40-50 ohms for data lines and 80-100 ohms for address/control lines. Keep trace lengths matched within ±10 mils for DQ/DQS groups. Use ground planes beneath the FBGA package to minimize inductance and crosstalk.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to the power balls. Use a 10uF bulk capacitor per power rail. Ensure VPP is clean and stable, as it is used for word line boosting. Follow Micron's power supply sequencing requirements.
The MT40A1G8SA-075:E dissipates up to 1.5W under heavy load. Ensure adequate airflow or a thermal pad to the PCB to keep the junction temperature below 95°C. The FBGA package has a thermal resistance of approximately 20°C/W; verify with thermal simulation.
Thông tin tuân thủ
RoHS compliant per Micron product page. Not AEC-Q100 qualified; commercial grade only.
