MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP
MPN: MW7IC2240NBR1 ✗ Cuối đờiMW7IC2240NBR1 Tóm tắt
A radio-frequency power amplifier (RF PA) is the final active stage of a wireless transmitter chain, responsible for boosting a low-power modulated signal from the transceiver/exciter to a level suitable for the antenna and over-the-air transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-6 GHz base-station PAs because it offers high power density, excellent linearity under digital modulation, robust VSWR tolerance, and cost-effective 28-32 V operation. The MW7IC2240NBR1 sits within the hierarchy: RF power amplifier -> power amplifier -> amplifier IC -> RF & wireless -> semiconductor.
The MW7IC2240NBR1 features 50 ohm on-chip matching, which removes the need for external input/output matching networks and simplifies PCB layout. Two quiescent-current bias pins (IDQ1 = 90 mA, IDQ2 = 420 mA) allow independent bias setting for the driver and final stages to optimize gain, linearity, and efficiency. The device is 100% PAR-tested for guaranteed output power capability under W-CDMA-like signals and is characterized with series equivalent large-signal impedance parameters and common-source S-parameters for accurate system-level simulation.
This page synthesizes distributor stock, pricing tiers, and same-package drop-in alternatives sourced from the manufacturer datasheet and cross-reference tools - information not aggregated on a single distributor page.
Bộ thay thế dễ dàng lắp đặt cho MW7IC2240NBR1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MW7IC2240NBR1 (cùng hình factor và footprint) — khác nhau ở Frequency Range, Technology, Mounting Type, Package, Quiescent Current Stage 1 (IDQ1).
MW7IC2240GNR1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MW7IC2240NR1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MW6IC2240NBR1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MW7IC2725NR1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MW7IC2240NBR1 Tỷ lệ tối đa & tính chất điện
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) |
| Quiescent Current Stage 1 (IDQ1) | 90 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA |
| Minimum Gain | 15 dB (typical 30 dB) |
| Input VSWR | 5:1 |
| Output VSWR | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) |
| P1dB (Output) | 46 dBm (per distributor listing) |
| Technology | RF LDMOS (multi-stage integrated) |
| Hộp | TO-272 WB-16 (over-molded plastic, 16-lead) |
| Kiểu lắp đặt | Surface Mount |
| Terminal Finish | Matte Tin (Sn) |
| Package Body Material | Plastic / Epoxy |
| Operating Mode | 100% PAR tested for W-CDMA-like signals |
Cấu hình chân MW7IC2240NBR1
| Chân 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| Chân 2 | VGG1 — Gate bias for driver stage |
| Chân 3 | GND — Ground / thermal pad |
| Chân 4 | VDD1 — Drain supply for driver stage (28 V) |
| Chân 5 | GND — Ground |
| Chân 6 | RF_OUT — RF output (50 ohm, on-chip matched) |
| Chân 7 | VDD2 — Drain supply for final stage (28 V) |
| Chân 8 | GND — Ground / thermal pad |
| Chân 9 | VGG2 — Gate bias for final stage |
| Chân 10 | NC — Not connected (per datasheet) |
| Chân 11 | GND — Ground |
| Chân 12 | NC — Not connected (per datasheet) |
| Chân 13 | GND — Ground / thermal pad |
| Chân 14 | NC — Not connected (per datasheet) |
| Chân 15 | GND — Ground |
| Chân 16 | NC — Not connected (per datasheet) |
DC Khu vực hoạt động an toàn (LDMOS Integrated PA)
Ứng dụng tiêu biểu
MW7IC2240NBR1 phù hợp cho 6 Áp dụngs: W-CDMA / UMTS Base Station Power Amplifier, TD-SCDMA Repeater / Small-Cell PA, LTE Band 1 Driver Amplifier, Public-Safety / Private LTE PA, Industrial RF Heating / Plasma Driver (2.1 GHz ISM-adjacent), Avionics / Datalink Transmitter (custom-filtered 2.1 GHz).
W-CDMA / UMTS Base Station Power Amplifier
The MW7IC2240NBR1 is purpose-built for the 2110-2170 MHz UMTS downlink band used in 3G macro and micro base stations. Its 4 W average W-CDMA output with PAR = 7.5 dB matches a small-cell or repeater final-stage power target, while 30 dB typical gain eliminates an external driver stage. The on-chip 50 ohm matching simplifies the PCB layout around the heatsink flange, and the device is 100% PAR-tested to guarantee linear output under real-world digitally modulated drive. Placed after the transceiver/exciter chain with a 28 V rail and input attenuator from PIN, the MW7IC2240NBR1 drives the antenna filter with ACPR-compliant 3GPP W-CDMA spectra in a 3.84 MHz channel bandwidth at +/-5 MHz offset.
Được đề xuất
TD-SCDMA Repeater / Small-Cell PA
The MW7IC2240NBR1's 2000-2200 MHz usable range covers the 2010-2025 MHz TD-SCDMA uplink and 1900-1920 MHz extended modes when paired with external filtering, making it well-suited for indoor TD-SCDMA repeaters. Its 5:1 input and output VSWR tolerance protects the final stage against antenna mismatch in dense urban deployments. The 28 V operation matches standard small-cell PSU rails, and the multi-stage structure with independent IDQ1 and IDQ2 biasing lets designers trade off gain for efficiency depending on traffic load. Placed between the DPD feedback path and the duplexer with 28 V drain switching, the MW7IC2240NBR1 sustains linear TD-SCDMA output at 4 W average while the bias network adjusts quiescent current to optimize DC consumption at low traffic.
Được đề xuất
LTE Band 1 Driver Amplifier
LTE Band 1 occupies 2110-2170 MHz, exactly the MW7IC2240NBR1's specified band. At 4 W average with a 7.5 dB LTE PAR profile, the part can serve as the final PA in a small-cell LTE Band 1 radio or as a driver stage for a higher-power macro BTS PA. The LDMOS technology provides the linearity required for OFDM signals with high peak-to-average ratios, and the 28 V supply is the standard rail for LTE base-station infrastructure. Compared with a discrete transistor solution, the MW7IC2240NBR1 reduces the BOM by removing external matching components and a bias sequencer. Placed between the digital pre-distortion feedback path and the higher-power PA chain, the MW7IC2240NBR1 provides 30 dB of gain and 4 W of linear output, with the 28 V drain supplied through an isolated switching converter to keep the PA chain noise off the modulator reference.
Được đề xuất
Public-Safety / Private LTE PA
The 2110-2170 MHz band is shared with some public-safety and private LTE networks in Region 1, and the MW7IC2240NBR1's W-CDMA / LTE modulation support makes it usable in these deployments. The TO-272 WB-16 over-molded plastic body is smaller and lighter than ceramic-packaged PAs, which matters for vehicle-mounted and portable repeaters. Its 5:1 VSWR tolerance handles the variable antenna conditions of temporary or vehicular installations where the antenna may be obstructed. Placed inside a ruggedized RF module with shock-mounted PCB and weatherproof housing, the MW7IC2240NBR1 delivers 4 W average output to the rooftop antenna while the bias network maintains IDQ2 = 420 mA for thermal stability across the -40 C to +85 C base-station operating range.
Được đề xuất
Industrial RF Heating / Plasma Driver (2.1 GHz ISM-adjacent)
Although the 2110-2170 MHz band is licensed for cellular use, industrial-scientific-medical (ISM) equipment operating on nearby frequencies can leverage the MW7IC2240NBR1 as a building block when filtered appropriately. The 28 V LDMOS architecture and 4 W average continuous power support plasma generation and RF heating applications that need stable, repeatable 2 GHz-class drive. The 100% PAR-tested output capability ensures that high-CREST-factor loads do not push the device outside its linear region. Placed inside an RF generator with a bandpass cavity filter and directional coupler, the MW7IC2240NBR1 delivers 4 W to the plasma chamber, with the 28 V drain modulated by an external AGC loop that adjusts quiescent current in response to reflected-power feedback.
Được đề xuất
Avionics / Datalink Transmitter (custom-filtered 2.1 GHz)
Some airborne datalink and telemetry systems operate in custom-filtered windows near the 2.1 GHz cellular band. The MW7IC2240NBR1's small TO-272 WB-16 footprint and 4 W average output are well-matched to compact airborne transmitters where size, weight, and power (SWaP) are critical. Its 5:1 VSWR tolerance handles the variable VSWR presented by an airborne antenna under banking maneuvers. The multi-stage LDMOS design provides the gain needed to drive a single PA from a low-power exciter without an intermediate stage. Placed inside a vibration-isolated RF tray with a low-loss bandpass filter and circulator on the output, the MW7IC2240NBR1 transmits 4 W average to the antenna, with the 28 V rail conditioned by a hold-up capacitor bank to ride out aircraft power transients.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MW7IC2240NBR1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MW7IC2240GNR1 | MW7IC2240NR1 | MW6IC2240NBR1 | MW7IC2725NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2600-2700 MHz |
| Output Power (Avg.) | 4 W | 4 W | 4 W | 4 W | 5 W (P1dB ~25 W CW) |
| Typical Gain | 30 dB | 30 dB | 30 dB | ~29 dB | ~28 dB |
| Supply Voltage | 28 V (24-32 V rated) | 28 V | 28 V | 28 V | 28 V |
| Package Body | Over-molded plastic (NB) | Plastic (GN suffix variant) | Non-overmold (N suffix) | Over-molded plastic (NB) | Non-overmold (N suffix) |
| Lifecycle Status | Obsolete | Active (in production) | Obsolete | Obsolete | Obsolete |
Bảo phân biệt quan trọng
- On-chip 50 ohm input/output matching (vsDiscrete LDMOS transistor solution)
- 100% PAR-tested for guaranteed W-CDMA output capability (vsGeneric RF PA without PAR testing)
- Multi-stage integrated design with independent IDQ1 / IDQ2 biasing (vsTwo-stage discrete PA chain)
Ghi chú thiết kế
Estimated: at 4 W Avg. W-CDMA output from 28 V the dissipated power is roughly 11-14 W. The TO-272 WB-16 over-mold body has a typical theta_JC of about 1.5 C/W per NXP LDMOS family curves. Mount the device on a continuous copper ground pour across all GND pins and add a bolted-on aluminum heatsink or cold plate for CW or high-duty operation. Without a heatsink the junction temperature can exceed 150 C at maximum dissipation, triggering thermal shutdown.
Keep the 28 V drain traces wide (>=1 mm per ampere) and decouple at each pin with a 100 nF ceramic + 10 uF electrolytic + 220 uF bulk capacitor stack. Place the gate-bias RC networks (VGG1, VGG2) within 5 mm of their respective pins to prevent low-frequency oscillation. Route RF input and output traces as 50 ohm microstrip on the top layer over a continuous ground plane; the on-chip matching tolerates small PCB parasitic mismatch but a directional coupler on the output is recommended for closed-loop AGC.
Do not exceed 32 V on VDD1 or VDD2 - the LDMOS die is rated 24-32 V only. Sequence gate bias before drain voltage (typical: VGG first, then ramp VDD) to avoid uncontrolled current spikes that can blow the bond wires. The MW7IC2240NBR1 is obsolete as of 2026-10-15; new designs should target the in-production MW7IC2240GNR1 family variant. When biasing, set IDQ1 = 90 mA and IDQ2 = 420 mA at room temperature and re-trim for thermal compensation in production.
Thông tin tuân thủ
Terminal finish is Matte Tin (Sn) per distributor listing, indicating lead-free assembly. RoHS, REACH, halogen-free and conflict-minerals status were not present in the verified web data and are marked 'unknown'. AEC-Q100 is not applicable - this is a base-station RF power device, not an automotive-qualified part.
