MW7IC2240NBR1 vs MW7IC2220NBR1 So sánh

So sánh chi tiết song song của MW7IC2240NBR1 bằng NXP Semiconductors và MW7IC2220NBR1 bằng NXP Semiconductors. So sánh các thông số quan trọng, thông số điện tử, gói gọn, trạng thái vòng đời, giá cả và khả năng cung cấp để xác định linh kiện tốt nhất cho yêu cầu thiết kế của bạn.

NXP Semiconductors
MW7IC2240NBR1 MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP

MW7IC2240NBR1 Obsolete
NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Hoạt động

So sánh thông số kỹ thuật

Tham số MW7IC2240NBR1 MW7IC2220NBR1
Thương hiệu NXP Semiconductors NXP Semiconductors
Danh mục RF Amplifiers RF Amplifiers
Trạng thái vòng đời Obsolete Hoạt động
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band)
Modulation / RF Type W-CDMA (also TD-SCDMA, LTE) —
Output Power (Average) 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA —
Supply Voltage (VDD) 28 V (rated 24 V to 32 V operation) —
Quiescent Current Stage 1 (IDQ1) 90 mA 80 mA
Quiescent Current Stage 2 (IDQ2) 420 mA 300 mA
Minimum Gain 15 dB (typical 30 dB) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (on-chip matched) —
P1dB (Output) 46 dBm (per distributor listing) —
Technology RF LDMOS (multi-stage integrated) RF LDMOS (Laterally Diffused MOSFET)
Hộp TO-272 WB-16 (over-molded plastic, 16-lead) —
Kiểu lắp đặt Surface Mount Surface Mount (flange/over-molded)
Terminal Finish Matte Tin (Sn) —
Package Body Material Plastic / Epoxy —
Operating Mode 100% PAR tested for W-CDMA-like signals —
Trạng thái RoHS [DATA_NEEDED: RoHS compliance] —
Chức năng — W-CDMA Wideband Integrated Power Amplifier
Operating Frequency (typical) — 2167.5 MHz
Average Output Power — 2 W (33 dBm)
Drain Supply Voltage (VDD) — 28 V (24 V to 32 V operating range)
Small-Signal Gain — 31 dB (typical at 2.17 GHz)
Package Type — TO-272WB-16 (over-molded plastic)
Input Matching — On-chip (50 ohm nominal)
Output Matching — On-chip (50 ohm nominal)
Characteristic Impedance — 50 ohm
Maximum Operating Temperature — 150 C
Modulation Support — W-CDMA, TD-SCDMA, LTE, multi-carrier
Test Signal — Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB
ACPR Measurement — 3.84 MHz channel bandwidth at +/-5 MHz offset

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