1ED3142MC12HXUMA1 vs 1EBN1001AEXUMA1 比較

詳細並排比較 1ED3142MC12HXUMA1 由 Infineon 與 1EBN1001AEXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1ED3142MC12HXUMA1 1EBN1001AEXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number 1ED3142MC12HXUMA1 —
Product Family EiceDRIVER X3 Compact —
Driver Type Isolated single-channel gate driver —
Isolation Technology Coreless transformer (galvanic) —
Isolation Voltage 3000 Vrms —
Number of Channels 1 —
輸出數量 2 (separate source/sink) 2 (separate source and sink paths)
Configuration Inverting, Non-Inverting High-Side / Low-Side (non-inverting booster)
Source Drive Current 6 A —
Sink Drive Current 6.5 A —
Maximum Rise Time 20 ns —
Maximum Fall Time 20 ns —
Propagation Delay (typ.) 40 ns —
Supported Switches IGBT, MOSFET, SiC MOSFET —
封裝 PG-DSO-8 (PG-LDSO-8-1) PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel)
安裝類型 Surface Mount Surface Mount
EU RoHS Compliant —
Part Status Active —
ECCN EAR99 —
Product Type — Isolated single-channel IGBT/MOSFET gate driver booster
Series — EiceDRIVER™ Boost (1EBN family)
Peak Output Current — ±15 A
Number of Drivers — 1
Input Signal — ASC input, active-clamping disable
Active Clamping — Yes (very fast reaction time)
工作溫度 — -40 °C to +125 °C (automotive grade)
Automotive Qualification — AEC-Q100 qualified
MSL 等級 — [DATA_NEEDED: MSL level]
RoHS 狀態 — Compliant
Target Switching Stage — Motor drives > 10 kW (up to 400 A modules)

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