1EDI3033ASXUMA1 vs 1EDN7136UXTSA1 比較

詳細並排比較 1EDI3033ASXUMA1 由 Infineon 與 1EDN7136UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDI3033ASXUMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Isolated single-channel gate driver High-side / Low-side gate driver IC
Technology Coreless transformer isolation —
Output Current (Source/Sink) 12 A typical —
Isolation Voltage (Vrms) 5700 Vrms —
Number of Channels 1 —
Propagation Delay 60 ns typical —
Target Power Device SiC MOSFET, IGBT —
封裝 PG-DSO-20-91 (wide-body) TSNP-6 with exposed pad (PG-VSON-1)
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
工作溫度 -40 C to +125 C —
Short-Circuit Protection DESAT with programmable blanking —
Miller Clamp Active Miller clamp integrated —
Bootstrap Diode Integrated —
Functional Safety ISO 26262 ASIL D ready —
Creepage Distance 8 mm (typical for wide-body DSO-20) —
安裝類型 Surface Mount Surface Mount
Compliance RoHS compliant —
Driven Device Type — GaN HEMT, N-channel MOSFET
輸出數量 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
工作溫度範圍 — -40 C to +150 C
RoHS 狀態 — Compliant
Lead-Free — Yes
無鹵素 — Yes (per Infineon product family convention)
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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