2N7002L vs SSM3K35CT-L3F 比較
詳細並排比較 2N7002L 由 onsemi 與 SSM3K35CT-L3F 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002L | SSM3K35CT-L3F |
|---|---|---|
| 品牌 | onsemi | Toshiba |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | SOT-23 (SOT-23-3) | SOT-883 (CST3), 3 pins |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | Toshiba Electronic Devices & Storage Corporation |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (V(DSS)) | — | 20 V |
| Gate-Source Voltage (V(GSS)) | — | ±10 V (per datasheet, [DATA_NEEDED: exact value]) |
| Continuous Drain Current (I(D)) | — | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] |
| Power Dissipation (P_D) | — | 500 mW (Ta) / [DATA_NEEDED: Ta condition] |
| Package Size | — | 1.0 mm x 0.6 mm, max height 0.5 mm |
| 工作溫度 | — | [DATA_NEEDED: junction/storage temperature range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Lead-Free | — | Yes (L3F suffix) |
| Tape and Reel | — | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |