BSC014N04LSATMA1 vs BSC0501NSIATMA1 比較
詳細並排比較 BSC014N04LSATMA1 由 Infineon 與 BSC0501NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC014N04LSATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon |
| Series | OptiMOS 5 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 32 A | 29 A |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-6 (SuperSO8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | Trench-gate OptiMOS 5 |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 25V/30V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 工作接面溫度 | — | -55C to +150C |
| Avalanche Rated | — | Yes |