BSC014N04LSATMA1 vs BSC0501NSIATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSATMA1

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active
Infineon
BSC0501NSIATMA1

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSATMA1 BSC0501NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.65
Manufacturer Infineon Technologies Infineon
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at Ta 32 A 29 A
Continuous Drain Current (ID) at Tc 100 A 100 A
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 96 W β€”
Gate-Source Voltage (VGS) max 20 V β€”
Operating Temperature Range -55C to +175C β€”
Package SuperSO8 (TDSON-8 FL) 5x6 mm PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Technology Trench (OptiMOS 5, thin-wafer) Trench-gate OptiMOS 5
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
Product Family β€” OptiMOS 5 25V/30V
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) β€” 2.5 W
Power Dissipation at Tc (PD) β€” 50 W
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Operating Junction Temperature β€” -55C to +150C
Avalanche Rated β€” Yes

Datasheets & Resources

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