BSC030N03LSGATMA1 vs BSZ130N03LSGATMA1 比較

詳細並排比較 BSC030N03LSGATMA1 由 Infineon 與 BSZ130N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC030N03LSGATMA1 BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 ✓ 啟用中

規格比較

參數 BSC030N03LSGATMA1 BSZ130N03LSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
工作接面溫度 -55C to +150C —
封裝 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
MSL 等級 1 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (100% tested) —
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
連續汲極電流 (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
工作溫度範圍 — -55 C to +150 C (junction)
Lead-Free — Yes
無鹵素 — Yes
Qualification — Industrial / Commercial (non-automotive)

資料表與資源

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