BSC097N06NSATMA1 vs IAUZ30N10S5L240ATMA1 比較
詳細並排比較 BSC097N06NSATMA1 由 Infineon 與 IAUZ30N10S5L240ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ 啟用中規格比較
| 參數 | BSC097N06NSATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 / 外殼 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (trench) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (Unlimited) | — |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| 封裝 | — | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| 工作溫度範圍 | — | -55°C to +175°C (junction, automotive grade) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |