BSC117N08NS5ATMA1 vs BSC076N06NS3GATMA1 比較
詳細並排比較 BSC117N08NS5ATMA1 由 Infineon 與 BSC076N06NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC117N08NS5ATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | N-Channel Trench MOSFET |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 50 W | 69 W |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| 工作溫度範圍 | -55 C to +150 C (typical MOSFET junction) | -55C to +150C |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | 1 | 1 (unlimited) |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RoHS Compliance | — | Compliant |
| 無鹵素 | — | Yes (per Infineon product page) |