BSP316PH6327XTSA1 vs BSP88H6327XTSA1 比較
詳細並排比較 BSP316PH6327XTSA1 由 Infineon 與 BSP88H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP316PH6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 封裝 | PG-SOT223-4 (TO-261-4) | PG-SOT223-4 (SOT-223-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C (junction) | — |
| 腳位數 | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | SIPMOS (planar enhancement mode) |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel (H6327 suffix) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 240 V |
| Continuous Drain Current (ID) | — | 350 mA at Ta=25 C |
| Power Dissipation (PD) | — | 1.8 W at Ta=25 C |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| 工作溫度 | — | -55 C to +150 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |