BSP78HUMA1 vs BSP88H6327XTSA1 比較

詳細並排比較 BSP78HUMA1 由 Infineon 與 BSP88H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ 啟用中

規格比較

參數 BSP78HUMA1 BSP88H6327XTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers MOSFETs
生命週期狀態 啟用中 啟用中
Technology Smart SIPMOS (N-channel vertical power FET) SIPMOS (planar enhancement mode)
功能 Self-protected low-side power switch —
Operating Supply Voltage (Vbb) 4.5 V to 42 V —
Continuous Load Current Up to 3 A —
On-state Resistance (Rds(on)) 200 mΩ typical —
Input Logic Level Logic-level (3.3 V / 5 V compatible) —
Current Limitation Yes (internal) —
過熱關機 Yes (with auto-restart) —
Overvoltage Protection Yes (load-dump tolerant) —
Short-circuit Protection Yes —
Overload Protection Yes —
ESD Protection Yes (on input pin) —
Diagnostic Output Open-drain status flag —
工作接面溫度 -40 °C to +150 °C —
封裝 PG-SOT223-4 (TO-261-4) with exposed tab PG-SOT223-4 (SOT-223-3)
安裝類型 Surface Mount Surface Mount
AEC-Q100 Qualification Qualified —
RoHS 狀態 Compliant (Green product) —
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Configuration — Single
工作溫度 — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL 等級 — [DATA_NEEDED: MSL level]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

資料表與資源

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