BSR316PH6327XTSA1 vs BSP129H6327XTSA1 比較
詳細並排比較 BSR316PH6327XTSA1 由 Infineon 與 BSP129H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSR316PH6327XTSA1 | BSP129H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR316PH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | -100 V | 240 V |
| Continuous Drain Current (ID) at TA | -360 mA | — |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| 封裝 | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (SOT-223, 3+Tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C (junction) | — |
| Qualification | Automotive | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Polarity | P-Channel | — |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| On-Resistance RDS(on) max | — | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| 工作溫度 | — | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |