BSS138LT1G vs 2N7002L 比較

詳細並排比較 BSS138LT1G 由 onsemi 與 2N7002L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSS138LT1G 2N7002L
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V 60 V
Continuous Drain Current (ID) 200 mA (Ta) 115 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) 200 mW (Ta), 225 mW max
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 1 V to 2.5 V
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
封裝 SOT-23-3 (TO-236) SOT-23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters Low-side switching, servo motor control, gate driving, logic-level shifting
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Gate-Source Voltage (VGS) — +/-20 V
Technology — High cell density trench MOSFET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Manufacturer — onsemi

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