BSS138NH6327XTSA2 vs BSS138L 比較

詳細並排比較 BSS138NH6327XTSA2 由 Infineon 與 BSS138L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 啟用中

規格比較

參數 BSS138NH6327XTSA2 BSS138L
品牌 Infineon onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel N-Channel
Operating Mode Enhancement Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA 200 mA
Power Dissipation (Ta) 360 mW 350 mW
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
封裝 PG-SOT-23 (3-pin) SOT-23-3
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: Tj max and operating range] [DATA_NEEDED: operating temperature range]
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
無鹵素 Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel 3000 units per reel (tape and reel)
VDS Drain-Source Voltage — 50 V
RDS(on) Max — 3.5 ohm
Technology — Trench MOSFET, high cell density
Gate Type — Logic Level
Configuration — Single FET
Switching Performance — Fast switching, rugged, reliable
輸入電容 — [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage — [DATA_NEEDED: VGS max rating]
RoHS 狀態 — [DATA_NEEDED: RoHS status]

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