BSZ0901NSIATMA1 vs BSC0921NDIATMA1 比較

詳細並排比較 BSZ0901NSIATMA1 由 Infineon 與 BSC0921NDIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 ✓ 啟用中

規格比較

參數 BSZ0901NSIATMA1 BSC0921NDIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS 25V (N-channel)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
封裝 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TISON-8 (8-pin, exposed pad)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
工作溫度範圍 -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 狀態 Compliant Compliant
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Pulsed Drain Current (IDM) — 31 A (per channel, package-limited)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
工作溫度 — -55C to +150C (junction)
MSL 等級 — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

資料表與資源

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