BSZ0904NSIATMA1 vs BSZ0901NSIATMA1 比較
詳細並排比較 BSZ0904NSIATMA1 由 Infineon 與 BSZ0901NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ0904NSIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS (N-channel power MOSFET) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | 25 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm | — |
| On-State Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 37 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| 工作溫度範圍 | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| 封裝 | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | — |
| Lead Plating | Pb-free | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| 腳位數 | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |