BSZ110N08NS5ATMA1 vs IPD70N10S312ATMA2 比較
詳細並排比較 BSZ110N08NS5ATMA1 由 Infineon 與 IPD70N10S312ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ110N08NS5ATMA1 | IPD70N10S312ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS-T Power-MOSFET (N-Channel) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| 封裝 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TO252-3-11 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (unlimited floor life) |
| Part Number | — | IPD70N10S312ATMA2 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Rated | — | Yes |