BTS6133DAUMA1 vs BSD235CH6327XTSA1 比較

詳細並排比較 BTS6133DAUMA1 由 Infineon 與 BSD235CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BTS6133DAUMA1 BSD235CH6327XTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BTS6133DAUMA1 —
Product Type Smart High-Side Power Switch —
Technology SIPMOS (N-channel MOSFET with control IC) OptiMOS™ low-voltage
Switch Configuration 1:1 (single high-side) —
輸出數量 1 —
Peak Drain Current 41 A —
Continuous Load Current 8 A —
Operating Voltage Range [DATA_NEEDED: VBB operating range] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 25C] —
封裝 PG-TO252-5-11 (DPAK-5) —
腳位數 5 6
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +150C -55 °C to +150 °C (junction)
Protection Features Over-temperature, short-circuit, overload, under-voltage, over-voltage, current limitation —
Diagnostic Feedback Yes (status / fault pin) —
MSL 等級 3 (per JEDEC J-STD-020, typical for DPAK) 1
RoHS 狀態 Compliant Compliant (lead-free)
AEC-Q100 Qualified AEC-Q100 qualified (automotive grade) —
Datasheet Document Size 257 Kbytes (15 pages) —
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Polarity — N-channel + P-channel
Channel Mode — Enhancement

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