BTT62001ENAXUMA1 vs BTN9960LVAUMA1 比較

詳細並排比較 BTT62001ENAXUMA1 由 Infineon 與 BTN9960LVAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BTT62001ENAXUMA1 BTN9960LVAUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Motor Drivers
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch Integrated Half-Bridge Motor Driver
拓撲 1:1 N-Channel High-Side P-channel high-side + N-channel low-side MOSFET with integrated driver IC
On-State Resistance (Ron) 200 mΩ (typical) —
Continuous Load Current 1.5 A —
Operating Voltage Range 5 V to 48 V —
Technology Smart6 HV (N-channel vertical MOSFET with charge pump) —
封裝 PG-TDSO-8-31 (DSO-8 with exposed pad) PG-HSOF-7-1
安裝類型 Surface Mount Surface Mount
Protection Features Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery Under-voltage, Over-current, Short-circuit, Over-temperature, Interleaved (shoot-through), Enable shutdown, Dead-time control
Diagnostic Output Current Sense (IS) pin —
Lamp Drive Capability 1 × R10W at 24 V or 1 × R5W at 12 V —
工作溫度 -40 °C to +150 °C junction —
MSL 等級 2A (4 weeks) —
ECCN EAR99 —
REACH Status REACH Unaffected —
Path Resistance (typ @ 25C) — 9.7 mOhm
Overcurrent Detection Threshold — 35 A
Supply Voltage Range (operating) — 8 V to 18 V
Supply Voltage Range (max rating) — 40 V
Logic Input Low Voltage (max) — 1.3 V
Logic Input High Voltage (min) — 1.6 V
Turn-On Rise Time (typ) — 2.5 us
Turn-Off Fall Time (typ) — 250 ns
Dead Time (typ) — 250 ns
Standby Current (max) — 3.3 uA
Propagation Delay (typ) — 3.6 us
工作溫度範圍 — -40C to +150C
AEC-Q100 Qualification — Grade 1 qualified
RoHS 狀態 — Compliant

資料表與資源

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