EDB2432B4MA-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-R 比較

詳細並排比較 EDB2432B4MA-1DAUT-F-D 由 Micron Technology 與 EDB2432B4MA-1DAUT-F-R 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 啟用中
Micron Technology
EDB2432B4MA-1DAUT-F-R EDB2432B4MA-1DAUT-F-R - 2Gbit LPDDR2 DRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-R - 2Gbit LPDDR2 DRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-R ✓ 啟用中

規格比較

參數 EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-R
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 Volatile Memory - DRAM LPDDR2 SDRAM (DRAM, mobile LPDDR2)
Technology SDRAM - Mobile LPDDR2 —
記憶體容量 2 Gbit (64M x 32) 2 Gbit
組織 64M x 32 64M x 32
Clock Frequency 533 MHz 533 MHz
介面 Parallel Parallel
封裝 134-VFBGA (10 x 11.5 mm) —
Package Construction DDP (Double-Die Package) —
工作溫度 -40C to +125C (Automotive) -40C to +125C
安裝類型 Surface Mount Surface Mount
Marking Code D9WVG —
Part Status Active —
Lead-Free Status Lead free (-F suffix) —
Halogen-Free Status Halogen free (-F suffix) —
供應電壓 [DATA_NEEDED: VDD/VDDQ supply voltage] —
Write Cycle Time - Word, Page [DATA_NEEDED: write cycle time] —
Supply Voltage (Min) — 1.14 V
Supply Voltage (Max) — 1.3 V
封裝 / 外殼 — 134-VFBGA (10 x 11.5 mm)
Die Package Configuration — DDP (Double Die Package)
Grade — Automotive (AUT)
Terminal Count — 134
Memory Circuits — 1
Packaging — Tape & Reel (TR suffix)
RoHS 狀態 — [DATA_NEEDED: RoHS status]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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