EP3C55F780C7N vs EP3C40F780C7N 比較
詳細並排比較 EP3C55F780C7N 由 Intel 與 EP3C40F780C7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3C55F780C7N | EP3C40F780C7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 55,856 | 39,600 LE |
| Embedded Memory | 2,396,160 bits (approximately 2.4 Mbit) | — |
| Embedded Memory Blocks | 312 M9K blocks | — |
| Embedded Multipliers | 156 (18 x 18) | 126 (18x18) |
| User I/O Count | 377 | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | 20 |
| Configuration Memory | 8 Kbits (supports PS, FPP, JTAG) | — |
| Process Technology | 65 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| I/O Bank Voltage (VCCIO) | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) | — |
| 工作溫度 | 0C to +85C (commercial, C7 speed grade) | 0C to +85C (commercial) |
| 封裝 | 780-ball FineLine BGA | 780-ball FBGA (FineLine BGA) |
| Speed Grade | 7 | 7 (C7, commercial) |
| RoHS 狀態 | Compliant | — |
| Total RAM Bits | — | 1,161,216 bits |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Configuration Method | — | JTAG, Active Serial, Passive Serial |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |