GAN111-650WSB vs IGLD60R070D1AUMA3 比較
詳細並排比較 GAN111-650WSB 由 Nexperia 與 IGLD60R070D1AUMA3 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | GAN111-650WSB | IGLD60R070D1AUMA3 |
|---|---|---|
| 品牌 | Nexperia | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Nexperia | — |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| On-Resistance RDS(on) (typ) | 97 mΩ | — |
| Continuous Drain Current (ID, at Ta) | 21 A | — |
| Power Dissipation (PD, at Ta) | 107 W | — |
| Technology | GaN HEMT H2 (cascode, normally-off) | GaN HEMT (enhancement-mode, normally-off) |
| Polarity / Channel Type | N-Channel | — |
| 封裝 | TO-247 (SOT429) through-hole, 3-lead | PG-LSON-8-1 (LSON-8 with exposed pad) |
| 安裝類型 | Through Hole | Surface Mount |
| Configuration | Single FET | — |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) | — |
| Operating Mode | Normally-off (cascode) | — |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives | — |
| RoHS 狀態 | Compliant | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) | — |
| Continuous Drain Current (ID, Tc) | — | 15 A |
| Power Dissipation (PD, Tc) | — | 114 W |
| On-Resistance (RDS(on)) | — | 70 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | Near zero (GaN technology) |
| Input Capacitance (Ciss) | — | 380 pF @ 400 V (per Utmel) |
| MSL 等級 | — | 3 |
| 無鹵素 | — | Yes |
| Operating Temperature (Tj) | — | [DATA_NEEDED: Tj max] |
| Series | — | CoolGaN™ |
| Polarity | — | N-Channel |
| Packaging | — | Tape & Reel |
| Factory Pack Quantity | — | 3000 |