H5AN4G6NBJR-RDC vs H5ANAG6NBJR-UHC 比較

詳細並排比較 H5AN4G6NBJR-RDC 由 SK hynix 與 H5ANAG6NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G6NBJR-RDC H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix

H5AN4G6NBJR-RDC ✓ 啟用中
SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ 啟用中

規格比較

參數 H5AN4G6NBJR-RDC H5ANAG6NBJR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
組織 256M x 16 256M x 16
供應電壓 1.2 V —
介面 CMOS, fully synchronous DDR4 (CMOS)
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
安裝類型 Surface Mount —
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh —
Data Mask Function Yes —
Asynchronous Reset Yes Supported
On-Die Termination Dynamic ODT —
ZQ Calibration Yes Supported
Write Leveling Yes Supported
CRC Function Yes —
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
封裝 — PBGA96 / FBGA-96 (TFBGA)
Package Dimensions — 13 mm length (per JESD-30 R-PBGA-B96)
Access Mode — Multi Bank, Page Burst
工作溫度 — -40C to +95C
Refresh — Auto / Self Refresh
Data Mask — Supported (DM function)
On-Chip Termination — Dynamic ODT
CRC — Supported
Supply Voltage Class — DDR4 (1.2 V class)
RoHS 狀態 — RoHS Compliant
REACH Compliance — Compliant
ECCN — EAR99
HTS Code — 8542.32.00.36
CAS 延遲 — [DATA_NEEDED: CAS Latency]
Max Data Rate — [DATA_NEEDED: Max Data Rate]

資料表與資源

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