H5AN4G6NBJR-RDC - 4Gb DDR4 SDRAM 256Mx16 TFBGA-96 | SK hynix
MPN： H5AN4G6NBJR-RDC ✓ 啟用中H5AN4G6NBJR-RDC 概覽
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. Compared with DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases the internal bank count, and adds features such as bank groups that raise effective data rates. In the system hierarchy, a DDR4 SDRAM sits under the DRAM class, under volatile semiconductor memory, and serves as the main system memory between the processor cache and non-volatile storage such as NAND flash.
Key features of the H5AN4G6NBJR family include fully synchronous operation referenced to both rising and falling edges of the clock, automatic and self-refresh modes, a data mask function, an asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration, write leveling, and CRC function support. These capabilities simplify controller interfacing and improve signal integrity at high data rates on multi-layer PCBs.
Architecturally, the device uses a CMOS core with bank-group organization and a double-data-rate I/O that transfers data on both clock edges. The -RDC speed grade suffix identifies the validated speed bin and operating conditions for this ordering code, while the BJR die and FBGA-96 package are shared across the family, enabling footprint-compatible density and organization options.
Typical applications include set-top boxes, smart TVs, network video recorders, industrial controllers, and consumer-grade main memory modules where 4Gb density in a x16 organization is preferred for simplified routing of a 16-bit data bus. The industrial -I temperature variants extend use into harsher environments.
When designing with this device, verify the speed grade against your memory controller timing table, follow SK hynix layout guidance for length-matched data lines, and implement ZQ calibration with the recommended precision reference resistor.
This page synthesizes distributor pricing tiers, same-package drop-in alternatives within the H5AN4G6NBJR/H5AN4G8NBJR families, and practical design notes not consolidated in the manufacturer datasheet.
直接替換替代品，適用於 H5AN4G6NBJR-RDC — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5AN4G6NBJR-RDC （相同外形與佔位） — 差異在於 Package, Interface, RoHS Status, Organization, Supply Voltage (VDD).
H5AN4G6NBJR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G6NBJR-UHC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G6NBJR-UHI
✅ 直接替換📋 參考替代品（不在目錄中）
H5AN4G6NBJR-PBC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-RDC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G8NBJR-VKC
✅ 直接替換聯絡詢價
查看資料表 →H5AN4G6NBJR-RDC 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| 供應電壓 | 1.2 V |
| 介面 | CMOS, fully synchronous |
| Package Code | TFBGA (FBGA-96) |
| Package Shape | Rectangular |
| Package Width | 7.5 mm |
| Number of Terminals | 96 |
| 安裝類型 | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | Auto / Self Refresh |
| Data Mask Function | Yes |
| Asynchronous Reset | Yes |
| On-Die Termination | Dynamic ODT |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) |
H5AN4G6NBJR-RDC 7.5 mm 腳位配置指南
H5AN4G6NBJR-RDC（7.5 mm 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： H5AN4G6NBJR-RDC.
請參閱 資料表 以查看完整腳位配置。
典型應用
H5AN4G6NBJR-RDC 適用於 6 應用s: Set-Top Box Main Memory, Smart TV and Display Systems, Industrial Controllers and HMI, Network Video Recorders (NVR), Networking Equipment, IoT Gateways and Edge Computing.
Set-Top Box Main Memory
The H5AN4G6NBJR-RDC fits set-top box designs that require 512 MB of main memory in a single x16 device. Its 4Gb density and 256M x 16 organization let a 16-bit SoC memory controller attach one chip per 512 MB, minimizing BOM count and routing complexity. The 1.2V DDR4 interface reduces memory subsystem power versus DDR3, while dynamic ODT, ZQ calibration, and write leveling maintain signal integrity across the point-to-point link. Because the H5AN4G6NBJR family is explicitly targeted at consumer main-memory applications needing large density and high bandwidth, the -RDC speed bin typically covers the data rates used by mainstream STB SoCs. Designers should verify controller timing tables against the datasheet speed suffix and enable CRC-protected operation where supported.
推薦
Smart TV and Display Systems
Smart TV SoCs with integrated graphics benefit from the H5AN4G6NBJR-RDC bandwidth for frame buffers and application memory. A single x16 device supplies 512 MB, and two devices double bandwidth by interleaving on a 32-bit bus. DDR4 operation at 1.2V lowers memory power consumption compared with DDR3 at 1.5V, which matters for standby regulations and thermal design in thin display housings. Features such as asynchronous reset simplify power-sequencing control from the TV power management IC, and auto/self-refresh preserves frame-buffer contents during low-power states. The FBGA-96 package (7.5 mm wide rectangular body) suits dense main-board layouts near the SoC. Match the -RDC speed grade to the SoC memory controller and use the recommended 240-ohm ZQ reference resistor.
推薦
Industrial Controllers and HMI
For industrial programmable controllers and human-machine interface panels, the -I variants of the same die (H5AN4G6NBJR-UHI) are specified from -40C to +95C, and the identical FBGA-96 footprint lets one PCB design serve both consumer (-RDC) and industrial (-UHI) builds. The H5AN4G6NBJR-RDC itself serves cost-optimized industrial SKUs operating in controlled cabinets. Self-refresh and auto self-refresh protect state across power events, while the data mask function allows efficient byte-level writes during logging and visualization tasks. Its 512 MB per device capacity comfortably hosts embedded Linux runtimes used in modern HMI stacks. Designers should enable temperature-compensated self-refresh per the SK hynix datasheet and validate ZQ calibration over the full operating range.
推薦
Network Video Recorders (NVR)
Surveillance NVR platforms buffer multiple HD video streams simultaneously, and the H5AN4G6NBJR-RDC provides 512 MB per chip with double-data-rate bandwidth for frame staging before disk writes. Using x16 devices keeps the address/command bus short: two devices on a 32-bit bus deliver 1 GB with a single chip-select pair in many SoC topologies. The asynchronous reset input lets the system CPU reset the DRAM independently during watchdog recovery without a full power cycle, improving camera-stream recovery time. CRC support on DDR4 adds error detection on critical links in electrically noisy environments with many switching supplies. Verify the -RDC speed bin against the SoC controller and apply dynamic ODT settings recommended in the SK hynix consumer DDR4 datasheet.
推薦
Networking Equipment
Entry-level routers, switches, and CPE gateways use DDR4 DRAM for packet buffers and embedded Linux execution. The H5AN4G6NBJR-RDC in x16 organization suits single-CPU designs where a 16-bit bus balances bandwidth against PCB layer count; scaling to two devices yields a 32-bit bus with 1 GB. DDR4 bank-group architecture improves effective bandwidth for the small, random read/write patterns typical of packet forwarding. The 1.2V rail simplifies integration with common networking PMICs, and write leveling plus ZQ calibration ensure reliable operation on the four-to-six-layer boards typical of CPE hardware. For telecom temperature builds, the footprint-identical -UHI industrial variant can be substituted without layout changes. Confirm speed-grade compatibility with the network processor memory controller.
推薦
IoT Gateways and Edge Computing
IoT gateways aggregating sensor data and running local analytics require hundreds of megabytes of DRAM for containers and protocol stacks; the H5AN4G6NBJR-RDC delivers 512 MB per device at DDR4 efficiency. The fully synchronous DDR4 interface clocks data on both edges of the differential clock, providing bandwidth headroom for TLS session handling and edge inference preprocessing. Low 1.2V operation and self-refresh modes support always-on gateway duty cycles and low-power standby states between uplink intervals. The FBGA-96 surface-mount package reflows alongside the SoC and flash on standard SMT lines. Gateways exposed to wide ambient swings should select the industrial -UHI suffix of the same die, which shares the identical footprint, enabling one layout across consumer and industrial SKUs.
推薦
推薦產品摘要
工程參考資料，適用於 H5AN4G6NBJR-RDC — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5AN4G6NBJR-VKC | H5AN4G6NBJR-UHC | H5AN4G6NBJR-UHI | H5AN4G8NBJR-RDC |
|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) rectangular, 7.5 mm wide | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Consumer (OTHER per listing) | Commercial/consumer | -40C to +95C feature listing | Industrial -40C to +95C | Consumer (same suffix class) |
| Speed Grade Suffix | -RDC | -VKC | -UHC | -UHI | -RDC |
| Key Features | Auto/self-refresh, DM, async reset, dynamic ODT, ZQ cal, write leveling, CRC | Same family feature set | Same family feature set | Same family feature set | Same family feature set (x8 I/O) |
主要差異化特點
- Same die and footprint across all suffix variants (對比H5AN4G6NBJR-VKC)
- Industrial-temperature upgrade path without relayout (對比H5AN4G6NBJR-UHI)
- x16 organization reduces bus routing versus x8 (對比H5AN4G8NBJR-RDC)
設計說明
DDR4 transfers data on both clock edges, so route data lines length-matched within each byte lane and match address/command/control to the clock per SK hynix consumer DDR4 layout guidance. For the x16 H5AN4G6NBJR-RDC, keep the single-chip point-to-point topology short (ideally under 50 mm) and set dynamic ODT values from the controller output driver/ODT lookup table in the datasheet. Enable write leveling during bring-up to close write timing, and verify ZQ calibration with the specified precision reference resistor before production.
The H5AN4G6NBJR-RDC runs from a 1.2V DDR4 rail; separate VDD and VDDQ power islands with bulk capacitance (e.g., 47 uF per rail region) plus dense 0.1 uF decoupling along the FBGA-96 ball field. Estimated: at typical DDR4-2400 x16 idle currents, a single 4Gb device contributes on the order of 100-300 mW depending on utilization - budget the memory PMIC accordingly and confirm with the datasheet current tables (IDD0/IDD4R/IDD4W) for your speed bin, since the -RDC bin specifics are not published in the retrieved data.
Do not mix suffix variants without verifying speed-bin compatibility: -RDC, -VKC, -UHC, and -UHI share the die and FBGA-96 footprint but code different validated speed/temperature combinations, and a mismatch with the controller timing table causes marginal operation at temperature extremes. Also, the H5AN4G8NBJR x8 variants are same-package but change the data organization - swapping them onto an x16 board breaks the data bus. Confirm the asynchronous reset pin is driven from a controller GPIO and not left floating.
合規資訊
Datasheet cover states Lead-Free & Halogen-Free. RoHS compliance inferred from lead-free consumer DDR4 offering; request formal declarations from SK hynix.
