H5AN4G8NBJR-PBC vs H5AN4G8NBJR-UHC 比較

詳細並排比較 H5AN4G8NBJR-PBC 由 SK hynix 與 H5AN4G8NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN4G8NBJR-PBC H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix

H5AN4G8NBJR-PBC ✓ 啟用中
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 啟用中

規格比較

參數 H5AN4G8NBJR-PBC H5AN4G8NBJR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Memory Density 4 Gbit —
組織 512M x 8 512M x 8
記憶體類型 DDR4 SDRAM DDR4 SDRAM
介面類型 Parallel, JEDEC DDR4 —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Speed Grade PBC —
Clock Frequency [DATA_NEEDED: Clock Frequency] —
CAS Latency (CL) [DATA_NEEDED: CAS Latency] —
封裝 78-ball FBGA TFBGA-78 (11 x 7.5 mm)
安裝類型 Surface Mount Surface Mount
Normal Operating Case Temperature 0C to 85C —
Extended Temperature Range up to 95C case (with increased refresh) —
Lead Free Yes —
無鹵素 Yes —
Refresh 8n prefetch, standard/auto refresh per DDR4 JEDEC [DATA_NEEDED: refresh rate 1x/2x/4x support]
Density — 4 Gbit
資料速率 — 2400 Mbps (PC2400)
供應電壓 — 1.2 V
介面 — DDR4 (JEDEC)
Technology — CMOS DRAM
Lifecycle Code — Active
RoHS 狀態 — Compliant (Rohs Code: Yes)
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.
工作溫度 — [DATA_NEEDED: operating temperature range]
CAS 延遲 — [DATA_NEEDED: CAS latency for -UHC speed bin]

資料表與資源

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