H5AN8G4NAFR-RDC vs MT40A1G8AG-062E 比較

詳細並排比較 H5AN8G4NAFR-RDC 由 SK hynix 與 MT40A1G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G4NAFR-RDC H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC ✓ 啟用中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 啟用中

規格比較

參數 H5AN8G4NAFR-RDC MT40A1G8AG-062E
品牌 SK hynix Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8Gb —
組織 1G x 4 1G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
封裝 FBGA-78 78-FBGA (7.5 x 11 mm)
Data Rate Class [DATA_NEEDED: exact -RDC speed bin MT/s] —
CAS Latency (CL) [DATA_NEEDED: CL for -RDC bin] —
介面 Synchronous, differential clock CK_t/CK_c Parallel
Bank Architecture DDR4 bank-group architecture —
安裝類型 Surface Mount Surface Mount (BGA)
RoHS 狀態 Compliant (Lead-Free) [DATA_NEEDED: RoHS status]
無鹵素 Yes —
工作溫度 [DATA_NEEDED: operating temperature range] —
Refresh Self-refresh and auto-refresh per DDR4 SDRAM standard —
Manufacturer SK hynix —
Datasheet Revision Rev. 1.2 / Jul. 2017 —
記憶體容量 — 8 Gbit
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

資料表與資源

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