H5AN8G6NAFR-UHC vs H5AN8G6NDJR-UHC 比較

詳細並排比較 H5AN8G6NAFR-UHC 由 SK hynix 與 H5AN8G6NDJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ 啟用中
SK hynix
H5AN8G6NDJR-UHC H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC ✓ 啟用中

規格比較

參數 H5AN8G6NAFR-UHC H5AN8G6NDJR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM (CMOS) DDR4 SDRAM
Memory Density 8 Gbit —
組織 512M x 16 512M x 16
供應電壓 1.2 V —
資料速率 2400 MT/s —
Clock Architecture Differential clock (CK_t / CK_c), fully synchronous —
封裝 96-ball FBGA (TFBGA) FBGA-96 (13x7.5 mm)
安裝類型 Surface Mount —
工作溫度 0C to +85C —
Refresh Auto self-refresh —
Precharge Auto precharge function —
Reset Asynchronous reset function —
Data Mask DM function supported —
Termination Dynamic on-chip termination (ODT) —
Calibration ZQ calibration function —
Error Checking CRC function —
Write Leveling Write leveling function supported —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
Density — 8 Gb
Speed Grade — 3200 Mbps (PC4-25600)
Supply Voltage (VDD) — 1.2 V
Supply Voltage (VDDQ) — 1.2 V
Number of Terminals — 96
Package Shape — RECTANGULAR
JESD-30 Code — R-PBGA-B96
Maximum Operating Temperature — 85 °C
Minimum Operating Temperature — 0 °C
RoHS — Compliant
Lead-Free — Yes
無鹵素 — Yes
Additional Features — Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling

資料表與資源

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