H5AN8G6NCJR-PBC vs H5AN8G6NAFR-PBC 比較

詳細並排比較 H5AN8G6NCJR-PBC 由 SK hynix 與 H5AN8G6NAFR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G6NCJR-PBC H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

H5AN8G6NCJR-PBC ✓ 啟用中
SK hynix
H5AN8G6NAFR-PBC H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC ✓ 啟用中

規格比較

參數 H5AN8G6NCJR-PBC H5AN8G6NAFR-PBC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Memory Organization 8Gb x16 (512M x 16) —
記憶體容量 8 Gbit —
資料速率 [DATA_NEEDED: exact speed grade of -PBC suffix] —
Family Data Rate Range Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) —
Supply Voltage (VDD) 1.2 V —
封裝 FBGA-96 (96-ball fine-pitch BGA) TFBGA-96 (rectangular)
安裝類型 Surface Mount Surface Mount
工作溫度 0C to +95C [DATA_NEEDED: operating temperature range]
介面 Parallel, synchronous to both clock edges —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Function Yes —
Write Leveling Yes —
CRC Function Yes —
Dynamic On-Die Termination (ODT) Yes —
ZQ Calibration Yes —
Lead-Free / Halogen-Free Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) —
RoHS 狀態 Compliant Compliant (Lead-Free & Halogen-Free)
Density — 8 Gbit
組織 — 512M x 16
VDD Supply Voltage — 1.20 V +/- 0.06 V
VDDQ Supply Voltage — 1.20 V +/- 0.06 V
VPP Supply Voltage — 2.5 V +0.25/-0.125 V
介面類型 — DDR4 (parallel, double data rate)
Speed Bins Supported — DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables)
Refresh — Auto / Self Refresh
DLL — DLL ON mode for speed bin operation
Clock — Differential clock (CK/CK#)
Number of Terminals — 96
Composition — CMOS

資料表與資源

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