H5AN8G6NCJR-VKC vs H5AN8G6NDJR-UHC 比較
詳細並排比較 H5AN8G6NCJR-VKC 由 SK hynix 與 H5AN8G6NDJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NCJR-VKC | H5AN8G6NDJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| 資料速率 | 2666 Mbps (MT/s) | — |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| 介面 | Parallel | — |
| 工作溫度 | 0C to +95C | — |
| 封裝 | FBGA-96 | FBGA-96 (13x7.5 mm) |
| 安裝類型 | Surface Mount | — |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| 功能特色 | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| RoHS 狀態 | Compliant | — |
| 生命週期狀態 | Active | — |
| Density | — | 8 Gb |
| 組織 | — | 512M x 16 |
| Speed Grade | — | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| JESD-30 Code | — | R-PBGA-B96 |
| Maximum Operating Temperature | — | 85 °C |
| Minimum Operating Temperature | — | 0 °C |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Additional Features | — | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |