H5AN8G6NDJR-XNC vs MT40A1G8SA-075:E 比較
詳細並排比較 H5AN8G6NDJR-XNC 由 SK hynix 與 MT40A1G8SA-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G6NDJR-XNC | MT40A1G8SA-075:E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $55.68 | — |
| 記憶體類型 | DDR4 SDRAM | SDRAM - DDR4 |
| 記憶體容量 | 8 Gb | 8Gbit (1G x 8) |
| Memory Organization | 512M x16 | — |
| 資料速率 | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| 封裝 | FBGA-96 (13x7.5 mm) | 78-FBGA (7.5x11 mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | Supported |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | Supported |
| Write Leveling | Yes | Supported |
| Asynchronous Reset | Yes | — |
| 介面 | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| 工作溫度範圍 | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| 安裝類型 | — | Surface Mount |
| Data Mask Function | — | Supported |
| RoHS 狀態 | — | Compliant |