H5ANAG4NBJR-RDC vs H5ANAG6NBJR-VKC 比較

詳細並排比較 H5ANAG4NBJR-RDC 由 SK hynix 與 H5ANAG6NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ 啟用中

規格比較

參數 H5ANAG4NBJR-RDC H5ANAG6NBJR-VKC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) —
組織 4G x 4 [DATA_NEEDED: x16 organization per datasheet]
Supply Voltage VDD 1.2 V —
資料速率 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) 2666 Mbps (per family reference, VKC speed code)
封裝 78-ball FBGA FBGA-96 (PBGA96)
安裝類型 Surface Mount Surface Mount
Prefetch 16n (bank group architecture) —
介面 SSTL-12 DDR4, SSTL-12
功能特色 Bank groups, CA parity, data CRC, ODT, DLL-off mode —
Refresh Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] —
Operating Temperature (case) -40C to +85C (industrial; extended to 95C per datasheet conditions) —
Temperature Grade Suffix RDC - industrial temperature, lead-free, halogen-free —
RoHS 狀態 Compliant (lead-free / halogen-free per RDC suffix) [DATA_NEEDED: RoHS status]
VDDQ 1.2 V —
Product Family SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
供應電壓 — 1.2 V (DDR4 standard)
工作溫度 — -40C to +95C (family grade reference)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

資料表與資源

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