H5ANAG8NBJR-VKC vs K4AAG085WM-BCWE 比較
詳細並排比較 H5ANAG8NBJR-VKC 由 SK hynix 與 K4AAG085WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NBJR-VKC | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 組織 | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| 供應電壓 | 1.14 V to 1.26 V (VDDQ) | 1.2 V |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| 工作溫度 | 0C to +85C | 0C to +85C |
| 封裝 | FBGA-78 | 78FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 狀態 | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| 資料速率 | — | 3200 Mbps (DDR4-3200) |
| 介面 | — | DDR4 (JEDEC-standard) |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |