H5TC4G63CFR-H9I vs H5TC4G63CFR-PBA 比較

詳細並排比較 H5TC4G63CFR-H9I 由 SK hynix 與 H5TC4G63CFR-PBA 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63CFR-H9I H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63CFR-H9I ✓ 啟用中
SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ 啟用中

規格比較

參數 H5TC4G63CFR-H9I H5TC4G63CFR-PBA
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
單價 (USD) — $6.23
記憶體類型 DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4Gb
組織 256M x 16 256M x 16
供應電壓 1.35 V —
I/O Voltage 1.35 V —
資料速率 1866 Mbps (PC3-14900) —
封裝 96-ball TFBGA 96-ball FBGA (PBGA96)
Temperature Grade Industrial (-40°C to +95°C) —
Number of Terminals 96 —
Memory Width 16 bits —
Lead-Free Yes Yes
無鹵素 Yes Yes
RoHS Compliant Yes —
CAS 延遲 Programmable (11, 12, 13) —
Burst Length 8 and 4 —
On-Die Termination Yes —
Refresh Modes Auto-refresh, Self-refresh —
Supply Voltage (VDD/VDDQ) — 1.35V +0.100/-0.067V
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-chip DLL — Yes
Data Mask (DM) — Yes
Auto Precharge — Yes
Auto Self-Refresh — Yes
Dynamic ODT — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Asynchronous Reset — Yes
RoHS — Compliant

資料表與資源

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