H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
MPN： H5TC4G63CFR-PBA ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $10.39 | $10.39 |
| 10 | $9.35 | $93.50 |
| 100 | $8.31 | $831.00 |
| 500 | $7.27 | $3,635.00 |
| 1,000 | $6.23 | $6,230.00 |
H5TC4G63CFR-PBA 概覽
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in computing, networking, and industrial applications where power efficiency is critical.
Key features include fully differential clock inputs (CK, CK) for improved signal integrity, differential data strobe (DQS, DQS) for precise data capture, and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK. The DM (data mask) function masks write data on both rising and falling edges, and the device supports auto precharge, auto self-refresh, and dynamic on-chip termination (ODT) for signal quality.
The H5TC4G63CFR-PBA uses a CMOS process and includes ZQ calibration for output driver and ODT impedance matching, write leveling for command/address timing, and asynchronous reset for initialization. These features ensure reliable high-speed operation and simplify system design.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment (routers, switches), and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling and follow the PCB layout guidelines in the datasheet to maintain signal integrity at high frequencies. The device requires a stable 1.35V supply and careful termination of the differential clock and strobe lines.
直接替換替代品，適用於 H5TC4G63CFR-PBA — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： H5TC4G63CFR-PBA （相同外形與佔位） — 差異在於 Package, Burst Length, Data Rate, CAS Latency, Refresh Period.
快速比較工具 — 選擇替代零件進行並排比較：
H5TC4G63MFR-PBA
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查看資料表 →H5TC4G63AFR-PBI
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查看資料表 →H5TC4G63CFR-xxJ
聯絡詢價
查看資料表 →MT41K256M16RE-15E:D
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查看資料表 →MT41K256M16HA-15EM:E
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查看資料表 →K4B4G1646E-BMK0
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查看資料表 →H5TC4G63CFR-PBA 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4Gb |
| 組織 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V |
| 封裝 | 96-ball FBGA (PBGA96) |
| Clock Input | Fully differential (CK, CK) |
| Data Strobe | Differential (DQS, DQS) |
| On-chip DLL | Yes |
| Data Mask (DM) | Yes |
| Auto Precharge | Yes |
| Auto Self-Refresh | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Asynchronous Reset | Yes |
| RoHS | Compliant |
| 無鹵素 | Yes |
| Lead-Free | Yes |
H5TC4G63CFR-PBA 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDDQ — Output power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQS — Data strobe |
| 腳位 B3 | DQS# — Data strobe complement |
| 腳位 B4 | VDDQ — Output power supply |
| 腳位 B5 | DM — Data mask |
| 腳位 B6 | VSS — Ground |
| 腳位 B7 | CK — Clock input |
| 腳位 B8 | CK# — Clock input complement |
| 腳位 B9 | VDD — Power supply |
| 腳位 B10 | CKE — Clock enable |
| 腳位 B11 | CS# — Chip select |
| 腳位 B12 | RAS# — Row address strobe |
典型應用
H5TC4G63CFR-PBA 適用於 6 應用s: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Networking Switches.
Laptop Memory
The H5TC4G63CFR-PBA is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256M x 16 organization provide sufficient capacity for mainstream laptops. The FBGA-96 package allows compact module designs, and the on-chip DLL ensures reliable high-speed data transfer. When used in SODIMM modules, it supports dual-channel configurations for improved performance. The low voltage also reduces heat generation, enhancing thermal management in thin laptops.
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Embedded Systems
In embedded systems, the H5TC4G63CFR-PBA provides high-density memory with low power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. Its 1.35V operation reduces power supply complexity and heat dissipation. The device supports features like auto self-refresh and dynamic ODT, which simplify system design and improve signal integrity. The FBGA-96 package is space-efficient, ideal for compact PCBs. With a wide operating temperature range, it can handle demanding industrial environments.
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Networking Equipment
The H5TC4G63CFR-PBA is well-suited for networking equipment such as routers, switches, and firewalls, where high bandwidth and low power are critical. Its 4Gb density supports large routing tables and buffering. The differential clock and strobe inputs ensure reliable data capture at high speeds, essential for packet processing. The low 1.35V supply reduces power consumption in always-on network devices. The FBGA-96 package allows high-density board layouts, and the on-chip DLL minimizes skew, improving signal integrity in high-speed designs.
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Industrial PCs
Industrial PCs require reliable, high-density memory that can operate in harsh environments. The H5TC4G63CFR-PBA offers 4Gb capacity and low 1.35V operation, reducing power consumption and heat in sealed enclosures. Its robust design includes features like auto self-refresh and write leveling, ensuring data integrity over long operational lifetimes. The FBGA-96 package is resistant to vibration and shock, making it suitable for factory automation and process control. The wide temperature range supports operation in unheated industrial settings.
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Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the H5TC4G63CFR-PBA provides high-speed memory for smooth multimedia performance. Its 4Gb density supports HD video streaming and multitasking. The low 1.35V operation reduces power consumption, contributing to energy-efficient designs. The FBGA-96 package enables slim product designs. The on-chip DLL and differential signaling ensure stable operation at high clock speeds, delivering the bandwidth needed for graphics and audio processing.
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Networking Switches
The H5TC4G63CFR-PBA is ideal for networking switches that require high-bandwidth memory for packet buffering and forwarding. Its 4Gb density provides ample storage for MAC address tables and queue management. The low 1.35V supply reduces power consumption in high-port-count switches. The differential clock and strobe inputs ensure precise data timing, critical for line-rate processing. The FBGA-96 package allows dense placement on switch PCBs, and the on-chip DLL minimizes clock skew, enhancing signal integrity in multi-layer boards.
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推薦產品摘要
工程參考資料，適用於 H5TC4G63CFR-PBA — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | H5TC4G63MFR-PBA | H5TC4G63AFR-PBI | MT41K256M16RE-15E | MT41K256M16HA-15EM | K4B4G1646E-BMK0 |
|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | D: FBGA-96 | E: FBGA-96 | FBGA-96 |
| Brand | SK Hynix | SK Hynix | SK Hynix | D: Micron | E: Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | D: 4Gb | E: 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | D: 256M x 16 | E: 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | D: 1.35V | E: 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | D: Compliant | E: Compliant | Compliant |
主要差異化特點
- Low voltage operation at 1.35V (對比Standard DDR3 at 1.5V)
- High density 4Gb in FBGA-96 (對比Lower density parts like 2Gb)
- RoHS and halogen-free compliance (對比Non-compliant parts)
設計說明
For high-speed DDR3L designs, maintain controlled impedance of 40-50 ohms for DQ, DQS, and clock traces. Use differential routing for CK/CK# and DQS/DQS# pairs with 100-ohm differential impedance. Keep trace lengths matched within 0.5mm to minimize skew. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a bulk capacitor (10uF) near the memory device.
The H5TC4G63CFR-PBA requires a stable 1.35V supply with low noise. Use a dedicated voltage regulator or a low-noise LDO for the VDD and VDDQ rails. Ensure the power supply can handle peak current spikes during read/write operations. Add ferrite beads in series with the power rails to filter high-frequency noise. Monitor the voltage tolerance of +0.100/-0.067V to avoid data corruption.
To maintain signal integrity, use on-die termination (ODT) settings as recommended in the datasheet. For point-to-point connections, set ODT to 40 ohms; for multi-drop, adjust accordingly. Use write leveling to compensate for clock-to-strobe skew. Ensure the reference voltage (VREF) is clean and stable, typically 0.49 * VDDQ. Follow the layout guidelines for VREF routing to avoid noise coupling.
合規資訊
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable as this is a memory component.
