IAUC120N04S6N009ATMA1 vs IAUA180N04S5N012AUMA1 比較

詳細並排比較 IAUC120N04S6N009ATMA1 由 Infineon 與 IAUA180N04S5N012AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 啟用中
Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 啟用中

規格比較

參數 IAUC120N04S6N009ATMA1 IAUA180N04S5N012AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
脈衝汲極電流 [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
工作接面溫度 -55 °C to +175 °C —
封裝 PG-TDSON-8-33 (5x6 mm) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm²
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
MSL 等級 1 —
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
Part Number — IAUA180N04S5N012AUMA1
Series — OptiMOS-5 40 V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 180 A (Tc)
Maximum Power Dissipation (PD) — 125 W (Tc)
R_DS(on) (max) — 1.2 mΩ at 10 V VGS
Gate-Source Voltage (VGS) max — ±20 V
工作溫度範圍 — -55 °C to +175 °C (Tj)
Technology — OptiMOS-5 Trench
RoHS 狀態 — Compliant

資料表與資源

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