IAUC50N08S5N102ATMA1 vs IPB60R280P7ATMA1 比較
詳細並排比較 IAUC50N08S5N102ATMA1 由 Infineon 與 IPB60R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC50N08S5N102ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 50 A | — |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 25 A, 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) | 21 nC @ 10 V | — |
| Input Capacitance (Ciss) | 1394 pF @ 40 V | — |
| Power Dissipation (PD) at TC=25°C | 60 W | — |
| 工作溫度範圍 | -55°C to +175°C | -55 °C to +150 °C (T_j max) |
| 封裝 / 外殼 | PG-TDSON-8-33 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Product Family | — | CoolMOS P7 (600 V) |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 封裝 | — | PG-TO263-3 (D2PAK) |
| 腳位數 | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |