IAUCN04S7N056DATMA1 vs IAUC120N04S6N010ATMA1 比較
詳細並排比較 IAUCN04S7N056DATMA1 由 Infineon 與 IAUC120N04S6N010ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN04S7N056DATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | — |
| 工作溫度範圍 | -55°C to +175°C | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| 封裝 | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 |
| RoHS 狀態 | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |