IAUZN04S7L025ATMA1 vs ISC015N06NM5ATMA1 比較
詳細並排比較 IAUZN04S7L025ATMA1 由 Infineon 與 ISC015N06NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUZN04S7L025ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | PG-TSDSON-8-44 (S3O8) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| 安裝類型 | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| 工作溫度範圍 | — | -55 C to +175 C |
| RoHS 狀態 | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |