IGD08N120S7ATMA1 vs IPTC017N12NM6ATMA1 比較
詳細並排比較 IGD08N120S7ATMA1 由 Infineon 與 IPTC017N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGD08N120S7ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | IGBTs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| 工作接面溫度 | -40C to +175C (industry grade) | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-HDSOP-16 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | OptiMOS 6, N-channel trench MOSFET |
| Configuration | Single | — |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| 工作溫度 | — | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | — | 10 V |