IPB068N20NM6ATMA1 vs ISC151N08NM6ATMA1 比較
詳細並排比較 IPB068N20NM6ATMA1 由 Infineon 與 ISC151N08NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB068N20NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 charge-compensation trench | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID) at TA | 15.4 A | — |
| Continuous Drain Current (ID) at TC | 134 A | — |
| Power Dissipation (PD) at TA | 3.8 W | — |
| Power Dissipation (PD) at TC | 300 W | — |
| On-Resistance RDS(on) max | 68 milliohm | 15.1 mΩ |
| RDS(on) Improvement vs Prior Generation | 42% lower | — |
| 封裝 | PG-TO263-3-2 (D2PAK, surface mount) | PG-TDSON-8 FL |
| 腳位數 | 3 (2 + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) | — |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 連續汲極電流 (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| 腳位數 | — | 8 |
| Channel Mode | — | Enhancement |
| 工作溫度 | — | -55 °C to +175 °C |
| RoHS 狀態 | — | Compliant |