IPB120N10S405ATMA1 vs IPB027N10N3GATMA1 比較
詳細並排比較 IPB120N10S405ATMA1 由 Infineon 與 IPB027N10N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB120N10S405ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Enhancement Mode (Trench) | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 190 W | — |
| On-Resistance R_DS(on) (typ) | 5 mΩ at VGS=10 V | — |
| 封裝 | PG-TO263-3 (D2PAK) Surface Mount | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | -55°C to +175°C (TJ) |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| Avalanche Tested | 100% (production-screened) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg at VGS=10V] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr - body diode] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |